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Czasopismo
2009 | 7 | 2 | 227-231
Tytuł artykułu

Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The local photovoltage of the pn-junction single-crystalline silicon solar cells observed by spot light scanning gradually decreases in the vicinity of edges. The energy conversion efficiency is increased by shadowing the edge regions where the local photovoltage is lower, showing that the defect density is high in the edge regions. From the analysis of the local photovoltage, the spacial distribution of defect states is obtained. The cyanide method, i. e., immersion of solar cells in HCN solutions at room temperature, increases the local photovoltage and increases the energy conversion efficiency.
Wydawca

Czasopismo
Rocznik
Tom
7
Numer
2
Strony
227-231
Opis fizyczny
Daty
wydano
2009-06-01
online
2009-04-26
Twórcy
  • ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
autor
  • ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
  • ISIR, Osaka University and CREST, Japan Science and Technology Agency, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0025-9
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