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2009 | 7 | 2 | 315-320
Tytuł artykułu

Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E 04 (energy at which the absorption coefficient is equal to 104 cm−1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.
Wydawca

Czasopismo
Rocznik
Tom
7
Numer
2
Strony
315-320
Opis fizyczny
Daty
wydano
2009-06-01
online
2009-04-26
Twórcy
  • Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Žilina, ul. kpt. J. Nálepku 1390, 031 01, Liptovský Mikuláš, Slovakia, mullerova@lm.uniza.sk
  • Department of Materials and Technology, New Technology Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic
  • Department of Materials and Technology, New Technology Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0023-y
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