Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects

• Autorzy: Jarmila Müllerová , Veronika Vavruňková , Pavel Å utta
• Języki publikacji: EN

Abstrakty

EN

We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (µc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E 04 (energy at which the absorption coefficient is equal to 104 cm−1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.

Słowa kluczowe

EN

thin-film silicon; absorption coefficient; optical band gap energy; volume fraction

• Czasopismo: Open Physics
• Rocznik: 2009
• Tom: 7
• Numer: 2
• Strony: 315-320

Daty

wydano

2009-06-01

online

2009-04-26

Twórcy

autor

Jarmila Müllerová

• Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Žilina, ul. kpt. J. Nálepku 1390, 031 01, Liptovský Mikuláš, Slovakia,

autor

Veronika Vavruňková

• Department of Materials and Technology, New Technology Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic

autor

Pavel Å utta

• Department of Materials and Technology, New Technology Research Center, University of West Bohemia, Univerzitní 8, 306 14, Plzeň, Czech Republic

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Identyfikatory

DOI

10.2478/s11534-009-0023-y