PL EN


Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Czasopismo
2009 | 7 | 2 | 321-326
Tytuł artykułu

On the topographic and optical properties of SiC/SiO2 surfaces

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The roughness of the semiconductor surface substantially influences properties of the whole structure, especially when thin films are created. In our work 3C SiC, 4H SiC and Si/a-SiC:H/SiO2 structures treated by various oxidation a passivation procedures are studied by atomic force microscopy (AFM) and scanning tunnelling microscopy (STM). Surface roughness properties are studied by fractal geometry methods. The complexity of the analysed surface is sensitive to the oxidation and passivation steps and the proposed fractal complexity measure values enable quantification of the fine surface changes. We also determined the optical properties of oxidized and passivated samples by using visual modelling and stochastic optimization.
Wydawca

Czasopismo
Rocznik
Tom
7
Numer
2
Strony
321-326
Opis fizyczny
Daty
wydano
2009-06-01
online
2009-04-26
Twórcy
  • DEF FEI Žilina University, Nálepku 1390, 03101, Liptovský Mikuláá, Slovakia, jurecka@lm.uniza.sk
  • Mathematical Institute SAS, Å tefánikova 49, 814 73, Bratislava, Slovakia
  • Academy of Armed Forces of Gen. M. R. Å tefánik, Demänová 393, 031 01, Liptovský Mikuláš, Slovakia
  • FCFT, Slovak University of Technology, Radlinského 9, 812 37, Bratislava, Slovakia
  • DFCM ISIR Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 587-0047, Japan
autor
  • FCFT, Slovak University of Technology, Radlinského 9, 812 37, Bratislava, Slovakia
autor
  • Institute of Physics SAS, Dúbravská cesta 9, 84511, Bratislava, Slovakia
Bibliografia
  • [1] H. Kobayashi, T. Sakurai, M. Takahashi, Y. Nishioka, Phys. Rev. B 67, 115305 (2003)
  • [2] K. C. Chang, L. M. Porter, J. Bentley, C. Y. La, J. Cooper Jr., J. Appl. Phys. 95, 8252 (2004) http://dx.doi.org/10.1063/1.1737801[Crossref]
  • [3] S. Hazza, S. Chakraborty, P. T. Lai, Appl. Phys. Lett. 85, 5580 (2004) http://dx.doi.org/10.1063/1.1829385[Crossref]
  • [4] K. Christiansen, M. Bassler, T. Dalibor, R. Helbig, Mater. Sci. Eng. B 61/62, 485 (1999) http://dx.doi.org/10.1016/S0921-5107(98)00458-9[Crossref]
  • [5] T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano, H. Matsunami, Jpn. J. Appl. Phys 44, 1213 (2005) http://dx.doi.org/10.1143/JJAP.44.1213[Crossref]
  • [6] S.-S Im, S. Terakawa, H. Iwasa, H. Kobayashi, Appl. Surf. Sci. 254, 3667 (2008) http://dx.doi.org/10.1016/j.apsusc.2007.10.102[Crossref]
  • [7] M. Satoh, H. Shimada, T. Nakamura, S. Yanagihara, Jpn. J. Appl. Phys. 41, 1233 (2002) http://dx.doi.org/10.1143/JJAP.41.680[Crossref]
  • [8] A. Asuha, S. Imai, M. Takahashi, H. Kobayashi, Appl. Phys. Lett. 85, 3783 (2004) http://dx.doi.org/10.1063/1.1804255[Crossref]
  • [9] A. Asuhaetal, Surf. Sci 600, 2523 (2006) http://dx.doi.org/10.1016/j.susc.2006.04.015[Crossref]
  • [10] S. Imai, M. Fujimoto, A. Asuha, M. Takahashi, H. Kobayashi, Surf. Sci. 600, 547 (2006) http://dx.doi.org/10.1016/j.susc.2005.11.005[Crossref]
  • [11] H. Kobayashi, S. Tachibana, K. Yamanaka, Y. Nakato, K. Yoneda, J. Apl. Phys 81, 7630 (1997) http://dx.doi.org/10.1063/1.365340[Crossref]
  • [12] A. Asano, A. Asuha, O. Maida, Y. Todokoro, H. Kobayashi, Appl. Phys. Lett. 80, 4552 (2002) http://dx.doi.org/10.1063/1.1484249[Crossref]
  • [13] H. Kobayashi, Y. Kasama, T. Fujinaga, M. Takahashi, H. Koinuma, Solid State Commun. 123, 151 (2002) http://dx.doi.org/10.1016/S0038-1098(02)00216-8[Crossref]
  • [14] N. Fujiwaraetal, Appl. Surf. Sci. 235, 372 (2004) http://dx.doi.org/10.1016/j.apsusc.2004.05.109[Crossref]
  • [15] S. Jurecka, E. Pinak, R. Brunner, Appl. Surf. Sci. 254, 3672 (2008)
  • [16] B. B. Mandelbrot, The fractal of nature (Freeman, New York, 1982)
  • [17] J.-F. Gouyet, Physicsandfractalstructures (Springer-Verlag, New York, 1996)
  • [18] A. Chhabra, R. V. Jensen, Phys. Rev. Lett. 62, 1327 (1989) http://dx.doi.org/10.1103/PhysRevLett.62.1327[Crossref]
  • [19] R. E. Plotnick, R. H. Gardner, W. W. Hargrove, K. Prestegaard, M. Perlmutter, Phys. Rev. E. 53, 5461 (1996) http://dx.doi.org/10.1103/PhysRevE.53.5461[Crossref]
  • [20] C. Allain, M. Cloitre, Phys. Rev. A 44, 3552 (1991) http://dx.doi.org/10.1103/PhysRevA.44.3552[Crossref]
  • [21] K. R. Castleman, Digitalimageprocessing (Prentice-Hall, New Jersey, 1996)
  • [22] S. Stach, J. Cybo, J. Chmiela, Mater. Charact. 26, 163 (2001) http://dx.doi.org/10.1016/S1044-5803(01)00119-X[Crossref]
  • [23] T. C. Halsley, M. H. Jensen, L. P. Kadanoff, I. Procaccia, B. I. Shraiman, Phys. Rev. A 33, 1141 (1986) http://dx.doi.org/10.1103/PhysRevA.33.1141[Crossref]
  • [24] P. Bury, P. Hockicko, V. W. Rampton, Acta Phys. Slovaca 53, 189 (2003)
  • [25] E. Pincik et al., Proc. SPIE 5574, 481 (2004) http://dx.doi.org/10.1117/12.608684[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-009-0021-0
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.