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2009 | 7 | 1 | 12-21
Tytuł artykułu

Few-electron semiconductor quantum dots with Gaussian confinement

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
Wydawca

Czasopismo
Rocznik
Tom
7
Numer
1
Strony
12-21
Opis fizyczny
Daty
wydano
2009-03-01
online
2009-01-08
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-008-0132-z
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