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2008 | 6 | 2 | 306-310
Tytuł artykułu

Pool-Frenkel effect and high frequency dielectric constant determination of semiconducting P2O5-Li2MoO4-Li2O and P2O5-Na2MoO4-Na2O bulk glasses

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The ternary 70P2O5-10Li2MoO4-20Li2O and 70P2O5-10Na2MoO4-20Na2O glasses, prepared by the press-melt quenching technique, were studied at temperatures between 298 and 418 K for their high dc electric field properties. For the above purpose, the effect of a strong electric field on the dc conduction of these amorphous bulk samples was investigated using the gap-type electrode configuration. At low electric fields, the current-voltage (I - V) characteristics have a linear shape, while at high electric fields (> 103 V/cm), bulk samples show nonlinear effects (nonohmic conduction). Current-voltage curves show increasing departure from Ohm’s law with increasing current density, leading to critical phenomena at a maximum voltage (threshold voltage), known as switching (switch from a low-conduction state to a higher-conduction state at threshold voltage). The Pool-Frenkel high-field effect was observed at electrical fields of about 103–104 V/cm; then the lowering factor of the potential barrier, the high frequency dielectric constant, and the refractive index of these glasses were determined.
Wydawca

Czasopismo
Rocznik
Tom
6
Numer
2
Strony
306-310
Opis fizyczny
Daty
wydano
2008-06-01
online
2008-03-26
Twórcy
  • School of Physics, Damghan University of Basic Sciences, Damghan, Iran, d.souri@gmail.com
  • Department of Physics, Faculty of Science, Razi University, Kermanshah, Iran
  • Azad University of Behabhan, Behbahan, Iran
Bibliografia
  • [1] D. Souri, M. Elahi, Phys. Scr. 75, 219 (2007) http://dx.doi.org/10.1088/0031-8949/75/2/017[Crossref]
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  • [4] D. Souri, M. Elahi, Czech. J. Phys. 56, 419 (2006) http://dx.doi.org/10.1007/s10582-006-0103-9[Crossref]
  • [5] M. Elahi, D. Souri, Indian J. Pure App. Phys. 40, 620 (2002)
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  • [9] B.I. Sharma, A. Srinvasan, Phys. Status Solidi B 229, 1405 (2002) http://dx.doi.org/10.1002/1521-3951(200202)229:3<1405::AID-PSSB1405>3.0.CO;2-G[Crossref]
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  • [12] N. Lebrun, M. Levy, J.L. Souquet, Solid State Ionics 40, 718 (1990) http://dx.doi.org/10.1016/0167-2738(90)90107-3[Crossref]
  • [13] V.K. Dhawan, A. Mansingh, J. Non-Cryst. Solids 51, 87 (1982) http://dx.doi.org/10.1016/0022-3093(82)90190-9[Crossref]
  • [14] J. Singh, Optoelectronics: An introduction to materials and devices (McGraw-Hill International Edition, Electrical Engineering Series, University of Michigan, 1996) 132
  • [15] M.A. Sidkey, R. Elmallawany, R.I. Nakhla, A. Abdelmoneim, J. Non-Cryst. Solids 215, 75 (1997) http://dx.doi.org/10.1016/S0022-3093(96)00404-8[Crossref]
  • [16] A.K. Jonscher, In: P.G. Lecomber, J. Mort (Eds.), Electronic and structural properties of amorphous semiconductors (Academic Press, London, 1973) 329
  • [17] I.G. Austin, M. Sayer, J. Phys. C 7, 905 (1974) http://dx.doi.org/10.1088/0022-3719/7/5/013[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-008-0031-3
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