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2008 | 6 | 2 | 283-288
Tytuł artykułu

Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The effects of Si, O, C and N ion implantation with different implantation doses on yellow luminescence (YL) of GaN have been investigated. The as-grown GaN samples used in the work were of unintentional doped n-type, and the photoluminescence (PL) spectra of samples had strong YL. The experimental results showed that YL of ion implanted samples exhibited marked reductions compared to samples with no implantation, while the near band edge (NBE) emissions were reduced to a lesser extent. The deep-level centers associated with YL may be produced in GaN films by O and C ion implantation, and identities of these deep-level centers were analyzed. It was also found that the dose dependence of YL was analogous with the one of the intensity ratios of YL to the near band edge (NBE) emission (I YL/I NBE) for ion implanted samples. The possible reason for this comparability has been proposed.
Wydawca

Czasopismo
Rocznik
Tom
6
Numer
2
Strony
283-288
Opis fizyczny
Daty
wydano
2008-06-01
online
2008-03-26
Twórcy
autor
  • School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China, zlm03@lzu.cn
  • School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China
autor
  • School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China
autor
  • School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China
autor
  • School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China
autor
  • School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China
autor
  • School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, China
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-008-0013-5
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