Growth and characterization of pulsed laser deposited ZnO thin films

• Autorzy: Andrej Vincze , Jaroslav Bruncko , Miroslav Michalka , Daniel Figura
• Języki publikacji: EN

Abstrakty

EN

One of the most important and promising materials from metal oxides is ZnO with specific properties for near UV emission and absorption optical devices. The properties of ZnO thin films strongly depend on the deposition method. Among them, pulsed laser deposition (PLD) plays an important role for preparing various kinds of ZnO films, e.g. doped, undoped, monocrystalline, and polycrystalline. Different approaches - ablation of sintered ZnO pellets or pure metallic Zn as target material are described. This contribution is comparing properties of ZnO thin films deposited from pure Zn target in oxygen atmosphere and those deposited from sintered ZnO target. There is a close connection between final thin film properties and PLD conditions. The surface properties of differently grown ZnO thin films are measured by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Furthermore, different approaches - ablation of sintered ZnO pellet or pure metallic Zn as target materials are described. The main results characterize typical properties of ZnO films versus technological parameters are presented.

Słowa kluczowe

EN

ZnO; thin film; pulsed laser deposition; laser ablation; Zn target; ZnO target

• Czasopismo: Open Physics
• Rocznik: 2007
• Tom: 5
• Numer: 3
• Strony: 385-397

Daty

wydano

2007-09-01

online

2007-06-08

Twórcy

autor

Andrej Vincze

• International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic,

autor

Jaroslav Bruncko

• International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic

autor

Miroslav Michalka

• International Laser Center, Ilkovicova 3, 812 19, Bratislava, Slovak Republic

autor

Daniel Figura

• Department of Microelectronics, Slovak University of Technology, Ilkovicova 3, 812 19, Bratislava, Slovak Republic

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Identyfikatory

DOI

10.2478/s11534-007-0027-4