On formation of thin SiO2/a-Si:H interface when biased oxidized semiconductor surface interacts with plasma or liquid solution

• Autorzy: Emil Pinčík , Hikaru Kobayashi , Masao Takahashi , Róbert Brunner , Stanislav Jurečka , Jaroslav Rusnák
• Języki publikacji: EN

Abstrakty

EN

In this paper we present the results of research into a relation(s) between the bias voltage of an oxide/a-Si:H/c-Si sample during formation of very-thin and thin oxides and the resulting distribution of oxide/semiconductor interface states in the a-Si:H band gap. Two oxygen plasma sources were used for the first time in our laboratories for formation of oxide layers on a-Si:H: i) inductively coupled plasma in connection with its application at plasma anodic oxidation; ii) rf plasma as the source of positive oxygen ions for the plasma immersion ion implantation process. The oxide growth on a-Si:H during plasma anodization is also simply described theoretically. Properties of plasmatic structures are compared to ones treated by chemical oxidation that uses 68 wt% nitric acid aqueous solutions. We have confirmed that three parameters of the oxide growth process - kinetic energy of interacting particles, UV-VIS-NIR light emitted by plasma sources, and bias of the samples - determine the distribution of defect states at both the oxide/a-Si:H interface and the volume of the a-Si:H layer, respectively. Additionally, a bias of the sample applied during the oxide growth process has a similar impact on the distribution of defect states as it can be observed during the bias-annealing of similar MOS structure outside of the plasma reactor.

Słowa kluczowe

EN

plasma-surface interaction; very thin oxides; interface; defect states; chemical oxidation

• Czasopismo: Open Physics
• Rocznik: 2007
• Tom: 5
• Numer: 3
• Strony: 428-445

Daty

wydano

2007-09-01

online

2007-05-01

Twórcy

autor

Emil Pinčík

• Institute of Physics SAS, Dúbravská cesta 9, 845 11, Bratislava, Slovak Republic

autor

Hikaru Kobayashi

• Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Organization, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

autor

Masao Takahashi

• Institute of Scientific and Industrial Research, Osaka University, and CREST, Japan Science and Technology Organization, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan

autor

Róbert Brunner

• Institute of Physics SAS, Dúbravská cesta 9, 845 11, Bratislava, Slovak Republic,

autor

Stanislav Jurečka

• Department of Engineering Fundamentals, Faculty of Electrical Engineering, University of Žilina, 031 01, Liptovský Mikuláš, Slovak Republic

autor

Jaroslav Rusnák

• Institute of Physics SAS, Dúbravská cesta 9, 845 11, Bratislava, Slovak Republic

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Identyfikatory

DOI

10.2478/s11534-007-0019-4