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2007 | 5 | 1 | 83-90
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Electronic transport mechanism in polydiacetylene crystals - variable range hopping or phonon-assisted tunnelling

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Języki publikacji
EN
Abstrakty
EN
Experimental results on the current-voltage characteristics of polydiacetylene (PDA) single crystals reported by Aleshin et al [Phys. Rev. Vol. B 69, (2004) art. 214203] are reinterpreted in terms of the phonon-assisted electron tunnelling model. It is shown that the experimental results, measured in the temperature range from 1.8 K to 300 K are consistent with the tunnelling rate dependence on field strength, computed for the same range of temperatures. An advantage of this model over that of Aleshin et al, using the variable range hopping (VRH) model, is the possibility of describing the behaviour of I - V data measured at both high and low temperatures with the same set of parameters characterizing this material. This assertion is confirmed by comparison of the temperature-dependent current-voltage data extracted from Aleshin et al’s work with tunnelling rate dependence on temperature, computed using two different expressions of the phonon-assisted tunnelling theory. The temperature dependence of the conductivity of an ion implanted PDA crystals [B. S. Elman et al, Appl. Phys. Lett., Vol. 46, (1985) p. 100] and polypyrrole [P. Dutta et al, Synth. Met., Vol. 139 (2003) p. 201] are also explained on the basis of this model.
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Wydawca

Czasopismo
Rocznik
Tom
5
Numer
1
Strony
83-90
Opis fizyczny
Daty
wydano
2007-03-01
online
2006-11-24
Twórcy
  • Department of Physics, Vilnius Pedagogical University, Vilnius, 08106, Lithuania
  • Department of Physics, Vilnius Pedagogical University, Vilnius, 08106, Lithuania, akiveris@vpu.lt
Bibliografia
  • [1] A.B. Kaiser: “Electronic transport properties of conducting polymers and carbon nanotubes”, Rep. Prog. Phys., Vol. 64, (2001), pp. 1–49. http://dx.doi.org/10.1088/0034-4885/64/1/201[Crossref]
  • [2] N.F. Mott and E.A. Davis: Electronic Processes in Non-Crystalline Materials, 2nd ed., Oxford, Clarendon, 1979.
  • [3] A.N. Aleshin, J.Y. Lee, S.W. Chu, S.W. Lee, B. Kim, S.J. Ahn and Y.W. Park: “Hopping conduction in polydiacetylene single crystals”, Phys. Rev. B, Vol. 69, (2004), art. 214203.
  • [4] A.N. Aleshin, S.W. Chu, V.I. Kozub, S.W. Lee, J.Y. Lee, S.H. Lee, D.W. Kim and Y.W. Park: “Non-Ohmic conduction in polydiacetylene thin films”, Curr. Appl. Phys., Vol. 5, (2005), pp. 85–89. http://dx.doi.org/10.1016/j.cap.2003.11.087[Crossref]
  • [5] B.S. Elman, D.J. Sandman and M.A. Newkirk: “Transport properties of an ion implanted polydiacetylene”, Appl. Phys. Lett., Vol. 46, (1985), pp. 100–103. http://dx.doi.org/10.1063/1.95831[Crossref]
  • [6] P. Pipinys and A. Kiveris: “Phonon-assisted tunnelling as a process determining current dependence on field and temperature in MEH-PPV diodes”, J. Phys.-Condens. Matter. Vol. 17, (2005), pp. 4147–4155. http://dx.doi.org/10.1088/0953-8984/17/26/013[Crossref]
  • [7] P. Pipinys and A. Kiveris: “Analysis of temperature-dependent conductivity of nanotubular polyaniline on the basis of phonon-assisted tunneling theory”, Phys. B, Vol. 355, (2005), pp. 352–356. http://dx.doi.org/10.1016/j.physb.2004.11.031[Crossref]
  • [8] A. Kiveris and P. Pipinys: “Nonlinear I - V characteristics in polyaniline due to phonon-assisted tunnelling”, Lithuanian J. Phys., Vol. 45, (2005), pp. 133–137.
  • [9] A. Kiveris, Š. Kudžmauskas and P. Pipinys: ”Release of electrons from traps by an electric field with phonon participation”, Phys. Stat. Sol. A, Vol. 37, (1976), pp. 321–327. http://dx.doi.org/10.1002/pssa.2210370140[Crossref]
  • [10] P. Pipinys, V. Lapeika and A. Rimeika: “Transport mechanism in mica and SiO dielectrics” Phys. Stat. Sol. B, Vol. 242, (2005), pp. 1447–1452. http://dx.doi.org/10.1002/pssb.200440020[Crossref]
  • [11] E.G. Wilson: “Polarons and exciton-polarons in one dimension: The case of polydiacetylene”, J. Phys. C: Solid State Phys., Vol. 16, (1983), pp. 1039–1047. http://dx.doi.org/10.1088/0022-3719/16/6/010[Crossref]
  • [12] D. Bloor and R. Kennedy: “Far infrared studies of the solid-state phase transition in bis(p-toluene sulphonate)diacetylene monomer and polymer”, Chem. Phys., Vol. 47, (1980), pp. 1–7. http://dx.doi.org/10.1016/0301-0104(80)80015-2[Crossref]
  • [13] S. Jain: “Transition rate of electron tunnelling into Si-SiO2 interface states”, Semicond. Sci. Technol., Vol. 3, (1988), pp. 963–965. http://dx.doi.org/10.1088/0268-1242/3/9/023[Crossref]
  • [14] S. Makram-Ebeid and M. Lannoo: “Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductor”, Phys. Rev. B, Vol. 25, (1982), pp. 6406–6424. http://dx.doi.org/10.1103/PhysRevB.25.6406[Crossref]
  • [15] P. Dutta, S.K. De: “Electrical properties of polypyrrole doped with ß-naphthalenesulfonicacid and polypyrrole-polymethyl methacrylate blends”, Synth. Met., Vol. 139, (2003) pp. 201–206. http://dx.doi.org/10.1016/S0379-6779(03)00018-3[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11534-006-0039-5
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