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Ge diffusion on Si surfaces

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Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.

Opis fizyczny
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, Russian Federation,
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