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2013 | 11 | 7 | 1225-1238
Tytuł artykułu

Silylated gallium and indium chalcogenide ring systems as potential precursors to ME (E=O, S) materials

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
The reaction of R3M (M=Ga, In) with HESiR′3 (E=O, S; R′3=Ph3, iPr3, Et3, tBuMe2) leads to the formation of (Me2GaOSiPh3)2(1); (Me2GaOSitBuMe2)2(2); (Me2GaOSiEt3)2(3); (Me2InOSiPh3)2(4); (Me2InOSitBuMe2)2(5); (Me2InOSiEt3)2(6); (Me2GaSSiPh3)2(7); (Et2GaSSiPh3)2(8); (Me2GaSSiiPr3)2(9); (Et2GaSSiiPr3)2(10); (Me2InSSiPh3)3(11); (Me2InSSiiPr3)n(12), in high yields at room temperature. The compounds have been characterized by multinuclear NMR and in most cases by X-ray crystallography. The molecular structures of (1), (4), (7) and (8) have been determined. Compounds (3), (6) and (10) are liquids at room temperature. In the solid state, (1), (4), (7) and (9) are dimers with central core of the dimer being composed of a M2E2 four-membered ring. VT-NMR studies of (7) show facile redistribution between four- and six-membered rings in solution. The thermal decomposition of (1)–(12) was examined by TGA and range from 200 to 350°C. Bulk pyrolysis of (1) and (2) led to the formation of Ga2O3; (4) and (5) In metal; (7)–(10) GaS and (11)–(12) InS powders, respectively. [...]
Wydawca

Czasopismo
Rocznik
Tom
11
Numer
7
Strony
1225-1238
Opis fizyczny
Daty
wydano
2013-07-01
online
2013-04-26
Twórcy
  • Department of Chemistry, Tulane University, 6823 Saint Charles Avenue, New Orleans, LA, 70118, USA
  • Department of Chemistry, Tulane University, 6823 Saint Charles Avenue, New Orleans, LA, 70118, USA
autor
  • Department of Chemistry, Tulane University, 6823 Saint Charles Avenue, New Orleans, LA, 70118, USA
autor
  • Department of Chemistry, Tulane University, 6823 Saint Charles Avenue, New Orleans, LA, 70118, USA, fink@tulane.edu
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11532-013-0255-y
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