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2013 | 11 | 7 | 1163-1171
Tytuł artykułu

Formation and properties of copper chalcogenides thin films on polymers formed using sodium telluropentathionate

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Języki publikacji
EN
Abstrakty
EN
The preparative conditions were optimized to get chalcogens layers on the polymer - polyamide PA surface by sorption at room temperature using sodium telluropentathionate, Na2TeS4O6. Further interaction of chalcogenized dielectric with copper’s (I/II) salt solution leads to the formation of mixed CuxSy-CuxTey layers. Optical, electrical and surface characteristics of the layers are highly controlled by the deposition parameters. The stoichiometry of these layers was established by UV-Visible and AA spectrometry. Optical absorption (transmittance) experiments show the samples are of high optical quality. The band gaps of thin films were obtained from their optical absorption spectra, which were found in the range of 1.44–2.97 eV. XRD was used in combination with AFM to characterize chalcogenides layers’ structural features. XRD analysis confirmed the formation of mixed copper chalcogenides’ layers in the surface of PA with binary phases such as Cu2Te, Cu3.18Te2, copper telluride, Cu2.72Te2, vulcanite, CuTe, anilite, Cu7S4 and copper sulfide, Cu1.8S. The crystallite sizes of thin films calculated by the Scherer formula were found to be in the range of 3.07–13.53 nm for CuxSy crystallites and 4.06–20.79 nm for CuxTey crystallites. At room temperature an electrical resistance of CuxSy-CuxTey layers varies from 3.0×103 kΩ□−1 to 1.0 kΩ□−1. [...]
Wydawca

Czasopismo
Rocznik
Tom
11
Numer
7
Strony
1163-1171
Opis fizyczny
Daty
wydano
2013-07-01
online
2013-04-26
Twórcy
  • Department of Inorganic Chemistry Faculty of Chemical Technology, Kaunas University of Technology, LT-50254, Kaunas, Lithuania, judita.sukyte@ktu.lt
  • Department of Inorganic Chemistry Faculty of Chemical Technology, Kaunas University of Technology, LT-50254, Kaunas, Lithuania
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11532-013-0254-z
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