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2009 | 7 | 4 | 769-773
Tytuł artykułu

Investigation of electrical properties of PANI/chalcogenide junctions

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Pure Polyaniline (EB) and Polyaniline doped with different protonic acids (ESs) were chemically synthesized using ammonium peroxydisulphate (APS) as an oxidant. Junctions have been prepared by evaporating chalcogenide materials (ZnSe, CdSe) on conducting polyaniline (EB & ESs) pellets using a vacuum evaporation technique. I–V characteristics of junctions have been studied at room temperature using the Keithley electrometer 6517A. I–V measurements show the rectification effect. A junction of ES[PO43−] may be preferred over the other junctions due to its low ideality factor and maximum rectification ratio. [...]
Wydawca

Czasopismo
Rocznik
Tom
7
Numer
4
Strony
769-773
Opis fizyczny
Daty
wydano
2009-12-01
online
2009-10-06
Twórcy
  • Semi Conductor and Polymer Science Lab, Deptartment of Physics, University of Rajasthan, Jaipur, 302004, India, s_vinodini@rediffmail.com
  • Semi Conductor and Polymer Science Lab, Deptartment of Physics, University of Rajasthan, Jaipur, 302004, India
  • Semi Conductor and Polymer Science Lab, Deptartment of Physics, University of Rajasthan, Jaipur, 302004, India
  • Semi Conductor and Polymer Science Lab, Deptartment of Physics, University of Rajasthan, Jaipur, 302004, India, n_s_saxena@rediffmail.com
  • Semi Conductor and Polymer Science Lab, Deptartment of Physics, University of Rajasthan, Jaipur, 302004, India
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_s11532-009-0072-5
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