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2004 | 2 | 2 | 254-265
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Surface diffusion of Pb on clean Si surfaces

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.
Wydawca

Czasopismo
Rocznik
Tom
2
Numer
2
Strony
254-265
Opis fizyczny
Daty
wydano
2004-06-01
online
2004-06-01
Twórcy
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia, olshan@isp.nsc.ru
Bibliografia
  • [1] A.E. Dolbak, B.Z. Olshanetsky, S.I. Stenin, S.A. Teys and T.A. Gavrilova: “Effect of Nickel on Clean Silicon Surfaces: Transport and Structure”, Surf.Sci., Vol. 218, (1989), pp. 37–54. http://dx.doi.org/10.1016/0039-6028(89)90619-5[Crossref]
  • [2] A.E. Dolbak, B.Z. Olshanetsky and S.A. Teys: “Mechanisms of Ni diffusion at silicon surface”, Physics of Low-Dimensional Structures, Vol. 11(12), (1999), pp. 41–52.
  • [3] A.E. Dolbak, R.A. Zhachuk and B.Z. Olshanetsky: “Mechanism of Cu transport along clean Si surfaces”, CEJP, Vol. 3, (2003), pp. 463–473.
  • [4] R.P. Elliott: Constitution of Binary Alloys, McGraw Hill, New York, 1965.
  • [5] J. Slezak, V. Chab, Z. Chvoj and P. Mutombo: “Study of Pb diffusion on Si(111)-(7×7) with scanning tunneling microscopy: Low coverage”, J. Vac. Sci. Technol., Vol. B18, (2000), pp. 1151–1155.
  • [6] J.M. Gómez-Rodríguez, J.J. Sáenz, A.M. Baró, J.-Y. Veuillen and R.C. Cinti: “Real-Time Observation of the Dynamics of Single Pb Atoms on Si(111)-(7×7) by Scanning Tunneling Microscopy”, Phys. Rev. Lett., Vol. 76, (1996), pp. 799–802. http://dx.doi.org/10.1103/PhysRevLett.76.799[Crossref]
  • [7] A. Petkova, J. Wollschläger, H.-L. Günter and M. Henzler: “Order and disorder in ultrathin Pb films grown on Si(111)7×7 substrates at low temperatures”, Surf. Sci., Vol. 482–485, (2001), pp. 922–927. http://dx.doi.org/10.1016/S0039-6028(01)00866-4[Crossref]
  • [8] K. Budde, E. Abram, V. Yeh and M.C. Tringides: “Uniform, self-organized, sevenstep height Pb/Si(111)-(7×7) islands at low temperatures”, Phys. Rev. B, Vol. 61, (2000), pp. 10602–10605. http://dx.doi.org/10.1103/PhysRevB.61.R10602[Crossref]
  • [9] L. Li, C. Koziol, K. Wurm, Y. Hong, E. Bauer and I.S.T. Tsong: “Surface morphology of Pb overlayers grown on Si(100)-(2×1)”, Phys. Rev. B, Vol. 50, (1994), pp. 10834–10842. http://dx.doi.org/10.1103/PhysRevB.50.10834[Crossref]
  • [10] G. Le Lay, K. Hricovini and J.E. Bonnet: “Ultraviolet photoemission study of the initial adsorption of Pb on Si(100)-2×1”, Phys. Rev. B, Vol. 39, (1989), pp. 3927–3930. http://dx.doi.org/10.1103/PhysRevB.39.3927[Crossref]
  • [11] H. Itoh, H. Tanabe, D. Winau, A.K. Schmid and T. Ichinokawa: “Growth mode and surface structures of the Pb/Si(001) system observed by scanning tunneling microscopy”, J. Vas. Sci. Technol., Vol. B12, (1994), pp. 2086–2089. http://dx.doi.org/10.1116/1.587711[Crossref]
  • [12] D. Brigs and M.P. Seach: Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy, John Willey & Sons, Chichester, New York, Brisbane, Toronto, Singapore, 1983.
  • [13] P.W. Palmberg, G.E. Riach, R.E. Weber and N.C. Mac-Donald: Handbook of Auger Electron Spectroscopy, Phys. Elek. Ind. Inc., Minnesota, 1972.
  • [14] R.G. Zhao, J.F. Jia and W.S. Yang: “Surface superstructures of the Pb/Si(001) system”, Surf. Sci. Lett., Vol. 274, (1992), pp. L519–L523. http://dx.doi.org/10.1016/0039-6028(92)90515-8[Crossref]
  • [15] L. Seehofer, D. Daboul, G. Falkenberg and R.L. Johnson: “STM study of the incommensurate structures of Pb on Ge(111) and Si(111) surfaces”, Surf. Sci., Vol. 307–309, (1994), pp. 698–703. http://dx.doi.org/10.1016/0039-6028(94)91479-6[Crossref]
  • [16] I.S. Hwang, R.E. Martinez, L. Chien and J.A. Golovchenko: “High coverage phases of Pb on the Si(111) surface: structures and phase transitions”, Surf. Sci., Vol. 323, (1995), pp. 241–257. http://dx.doi.org/10.1016/0039-6028(94)00613-X[Crossref]
  • [17] A. Petkova, J. Wollschläger, H.-L. Günter and M. Henzler: “Formation and commensurate analysis of “incommensurate” superstructures of Pb on Si(111)”, Surf. Sci., Vol. 471, (2001), pp. 11–20. http://dx.doi.org/10.1016/S0039-6028(00)00910-9[Crossref]
  • [18] Ya.E. Gegusin: “Surface diffusion on real crystall surface” In: Ya.E. Gegusin (Ed.): Surface diffusion and spreading, Nauka, Moscow, 1969, pp. 11–77 (in Russian).
  • [19] H.S. Carslaw and J.C. Jaeger. Conduction of Heat in Solids, Clarendon Press, Oxford, 1947, p. 71.
  • [20] H. Fujita: “Diffusion with a Sharp Moving Boundary” J. Chem. Phys., Vol. 21, (1953), pp. 700–705. http://dx.doi.org/10.1063/1.1698993[Crossref]
  • [21] J.-Y. Veuillen, J.-M. Gómez-Rodríguez and R.C. Cinti: “Submonolayer Pb deposition on Si(100) studied by scanning tunneling microscopy”, J. Vac. Sci. Technol., Vol. B14, (1996), pp. 1010–1014.
  • [22] H. Oyama and T. Ichikawa: “Structural study of reconstructions at Si(110)-Pb surfaces”, Surf. Sci., Vol. 357–358, (1996), pp. 476–480. http://dx.doi.org/10.1016/0039-6028(96)06205-X[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_BF02475631
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