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Surface diffusion of Pb on clean Si surfaces

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Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.

Opis fizyczny
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia
  • Institute of Semiconductor Physics, Russian Academy of Sciences, Prospekt Lavrentyeva 13, 630090, Novosibirsk, Russia,
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