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2005 | 3 | 2 | 270-302
Tytuł artykułu

An explanation of optical phenomena in non-crystalline semiconductors

Autorzy
Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Barrier model of a non-crystalline semiconductor is described in this article. The most important optical phenomena, which are typical for this group of materials, are explained on the base of this model. The model assumes that in non-crystalline semiconductors the potential barriers exist, which separate certain microscopic areas from each other, assuming barriers possess a parabolic profile. This conception explains the rise of exponential tails of optical absorption at the end of optical edge as well as electroabsorption, photoelectric conductivity, photoluminescence, and others. Using this model, many electric transport properties of non-crystalline semiconductors can be explained successfully.
Wydawca

Czasopismo
Rocznik
Tom
3
Numer
2
Strony
270-302
Opis fizyczny
Daty
wydano
2005-06-01
online
2005-06-01
Twórcy
autor
  • Department of Phhsics, Faculty of Civil Engineering, Slovak University of Technology, Radlinského 11, 813 68, Bratislava, Slovak Republic, ivan.banik@stuba.sk
Bibliografia
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  • [40] J. Krempaský, Š. Barta and P. Dieška: “The transport phenomena in amorphous semiconductors”, SUT, Bratislava, 1975.
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_2478_BF02475593
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