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2015 | 13 | 1 |
Tytuł artykułu

Correlation between Electron Mobility and Static Dielectric Permittivity of n-InSb

Autorzy
Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Direct analytical calculations of the static dielectric permittivity-dependent electron mobility due to different elastic scattering mechanisms for n-type InSb were carried out. The calculated static dielectric permittivity increases by increasing of donor concentration. The temperature dependence of the electron mobility from 10 K up to 300 K has been demonstrated. Generally, the electron mobility shows peak behavior in this range of temperatures. The direct correlation between the electron mobility and the static dielectric permittivity at 300 K was investigated. The dependence of the electron mobility on donor concentration was discussed both when the static dielectric permittivity is assumed to be varying and when it is assumed to be a constant. The difference in behavior was noticed particularly at high donor concentrations.
Wydawca

Czasopismo
Rocznik
Tom
13
Numer
1
Opis fizyczny
Daty
otrzymano
2015-05-18
zaakceptowano
2015-09-25
online
2015-11-26
Twórcy
  • Deanship of Scientific
    Research, King Saud University, Riyadh 11451, Saudi Arabia
    and Physics Department, Faculty of Science, Alexandria University,
    Alexandria 21511, Egypt
Bibliografia
  • [1] K. Martens, , Chi On Chui, , G. Brammertz, B. De Jaeger, D.Kuzum, M. Meuris, M. M. Heyns, T. Krishnamohan, K. Saraswat,H. E. Maes, and G. Groeseneken, IEEE Trans. Electron dev. 55(2008) 547-556.[Crossref]
  • [2] S. Balendhran, J. Deng, J. Zhen Ou, S. Walia, J. Scott, J. Tang, K.L.Wang, M. R. Field, S. Russo, S. Zhuiykov, M. S. Strano, N. Medhekar,S. Sriram, M. Bhaskaran, and K. Kalantar-zadeh, Adv.Mat. 25 (2013) 109–114.
  • [3] T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N.Yurkov, G. S. Simin, M. A. Khan, Solid-State Electron. 47 (2003)111–115.[Crossref]
  • [4] S. Jin, M. V. Fischetti, and T. W. Tang, J. Appl. Phys. 102 (2007)083715.[Crossref]
  • [5] H. S. Nalwa, ed., Handbook of Low and High Dielectric ConstantMaterials and Their Applications, Academic Press (1999).
  • [6] G.W. Castellan, and F. Seitz, On the Energy States of Impuritiesin Silicon, in Semiconducting Materials. Butterworth, London(1951).
  • [7] S. Dhar, and A.H.Marshak, Solid-State Electron., 28 (1985) 763-766.[Crossref]
  • [8] K. Alfaramawi and M.A. Alzamil, Optoelectron. Adv. Mat.- RapidComm. 3 (2009) 569.
  • [9] B. K. Ridley, J. Phys. C: Solid State Phys. 10 (1977) 1589.[Crossref]
  • [10] S. M. Sze, and K. K. Ng, Physics of Semiconductor Devices, JohnWiley & Sons, New Jersy (2006).
  • [11] M. Capizzi, G. A. Thomas, F. DeRosa, R. N. Bhatt, and T. M. Rice,Phys. Rev. Lett. 44 (1980) 1019-1022.[Crossref]
  • [12] J. Serre and A. Ghazali, Phys. Rev. B 28 (1983) 4704-4715.[Crossref]
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_1515_phys-2015-0039
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