Thermodynamic properties of semiconductor compounds studied based on Debye-Waller factors

• Autorzy: Nguyen Van Hung , Nguyen Cong Toan , Nguyen Ba Duc , Dinh Quoc Vuong
• Języki publikacji: EN

Abstrakty

EN

Thermodynamic properties of semiconductor compounds have been studied based on Debye-Waller factors (DWFs) described by the mean square displacement (MSD) which has close relation with the mean square relative displacement (MSRD). Their analytical expressions have been derived based on the statistical moment method (SMM) and the empirical many-body Stillinger-Weber potentials. Numerical results for the MSDs of GaAs, GaP, InP, InSb, which have zinc-blende structure, are found to be in reasonable agreement with experiment and other theories. This paper shows that an elements value for MSD is dependent on the binary semiconductor compound within which it resides.

Słowa kluczowe

EN

thermodynamic properties; Debye-Waller factor; Stillinger-Weber potential; statistical moment method; semiconductor compounds

• Czasopismo: Open Physics
• Rocznik: 2015
• Tom: 13
• Numer: 1

Daty

otrzymano

2015-02-22

zaakceptowano

2015-05-29

online

2015-08-06

Twórcy

autor

Nguyen Van Hung

• Department of Physics, Hanoi University of Science. 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam

autor

Nguyen Cong Toan

• Department of Physics, Hanoi University of Science. 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam

autor

Nguyen Ba Duc

• Tan Trao University, Km6, Trung Mon, Yen Son, Tuyen Quang, Vietnam

autor

Dinh Quoc Vuong

• Quang Ninh Education & Training Department,
  163 Nguyen Van Cu, Ha Long, Quang Ninh, Vietnam

Bibliografia

• ---
• [1] E.D. Crozier, J.J. Rehr, R. Ingalls, In: X-ray Absorption: Principles,Applications, Techniques of EXAFS, SEXAFS and XANES (Wiley, New York, 1988) Chap. 9, p. 373
• [2] N.V. Hung, J.J. Rehr, Phys. Rev. B 56, 43 (1997)
• [3] N.V. Hung, N.B. Duc, R.R. Frahm, J. Phys. Soc. Jpn. 72, 1254(2003)
• [4] M. Daniel, D.M. Pease, N. Van Hung, J.I. Budnick, Phys. Rev. B69, 134414 (2004)
• [5] N.V. Hung, P. Fornasini, J. Phys. Soc. Jpn. 76, 084601 (2007)
• [6] N.V. Hung, T.S. Tien, N.B. Duc, D.Q. Vuong, Mod. Phys. Lett. B28, 1450174 (2014)
• [7] M. Benfatto, C.R. Natoli, A. Filipponi, Phys. Rev. B 40, 9626(1989)
• [8] G. Dalba, P. Fornasini, D. Diop, M. Grazioli, F. Rocca, J. Non-Crys.Sol. 164, 159 (1993)
• [9] A.E. Stern, B.A. Bunker, S. M. Heald, Phys. Rev. B 21, 5521 (1980)
• [10] A. Yoshiasa, T. Nagai, O. Ohtaka, O. Kamishima, O. Shimomur,J. Synchrot. Rad. 6, 43 (1999)
• [11] F.D. Vila, J.J. Rehr, H.H. Rossner, H.J. Krappe, Phys. Rev. B 76,014301 (2007)
• [12] C. Lee, X. Gronze, Phys. Rev. B 51, 8610 (1995)
• [13] M. Schowalter, A. Rosenauer, J.T. Titantah, D. Lamoen, ActaCryst. A 65, 5 (2009)
• [14] M.S. Kushwaha, Phys. Rev. B 24, 2115 (1981)
• [15] V.V. Risov, N.N. Sirota, Chemical bonds in semiconductors, N.N.Sirota (Ed.) (Consutants Bureau, New York, 1967) 143
• [16] K.S. Liang, G.S. Guenzer, A.I. Bienenstock, Bull. Am. Phys. Soc.15, 1637 (1970)
• [17] A. Yoshiasa, K. Koto, H.Maeda, T. Ishi, Jpn. J. Appl. Phys. 36, 781(1997)
• [18] J. Stahn, M. Joehler, U. Pietsch, Acta Cryst. B 54, 231 (1998)
• [19] N. Tang, V.V. Hung, Phys. Stat. Sol. B 149, 511 (1988)
• [20] K. Masuda-Jindo, V.V. Hung, P.D. Tam, Phys. Rev. B 67, 094301(2003)
• [21] N.V. Hung, V.V. Hung, H.K. Hieu, R.R. Frahm, Physica B 406, 456(2011)
• [22] N.V. Hung, N.B. Trung, B. Kirchner, Physica B 406, 456 (2011)
• [23] F.H. Stillinger, T.A. Weber, Phys. Rev. B 31, 5262 (1985)
• [24] M. Ichimura, Physica Stat. Sol. (a) 153, 431 (1996)
• [25] S. Erkoc, Phys. Rep. 278, 79 (1997)
• [26] P.N. Keating, Phys. Rev. 145, 637 (1966)
• [27] R.M. Martin, Phys. Rev. B 1, 4005 (1970)
• [28] J.M. Ziman, Principles of the Theory of Solids, Second ed. (CambridgeUniversity Press, London, 1972)

Identyfikatory

DOI

10.1515/phys-2015-0031