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2015 | 13 | 1 |
Tytuł artykułu

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.
Słowa kluczowe
Wydawca

Czasopismo
Rocznik
Tom
13
Numer
1
Opis fizyczny
Daty
wydano
2015-01-01
otrzymano
2014-02-28
zaakceptowano
2014-08-23
online
2014-11-03
Twórcy
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria, nesheva@issp.bas.bg
autor
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
autor
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
autor
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria
autor
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
autor
  • Institute of Solid State
    Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
    Blvd, 1784 Sofia, Bulgaria
  • Institute of Engineering, Autonomous
    University of Baja California, Benito Juarez Blvd. esc.
    Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_1515_phys-2015-0006
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