Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

• Autorzy: Diana Nesheva , Nikola Nedev , Mario Curiel , Valeri Dzhurkov , Abraham Arias , Emil Manolov , David Mateos , Benjamin Valdez , Irina Bineva , Rigoberto Herrera
• Języki publikacji: EN

Abstrakty

EN

This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

Słowa kluczowe

EN

MOS structures; Si nanocrystals; radiation dosimetry

• Czasopismo: Open Physics
• Rocznik: 2015
• Tom: 13
• Numer: 1

Daty

wydano

2015-01-01

otrzymano

2014-02-28

zaakceptowano

2014-08-23

online

2014-11-03

Twórcy

autor

Diana Nesheva

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria,

autor

Nikola Nedev

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

autor

Mario Curiel

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

autor

Valeri Dzhurkov

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria

autor

Abraham Arias

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

autor

Emil Manolov

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria

autor

David Mateos

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

autor

Benjamin Valdez

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

autor

Irina Bineva

• Institute of Solid State
  Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee
  Blvd, 1784 Sofia, Bulgaria

autor

Rigoberto Herrera

• Institute of Engineering, Autonomous
  University of Baja California, Benito Juarez Blvd. esc.
  Calle de la Normal, s/n, C. P. 21280 Mexicali, B. C., Mexico

Bibliografia

• [1] O. F. Siebel, M. C. Schneider, C. Galup– Montoro, in Proc. IEEE10th International New Circuits and Systems Conference (NEWCAS),June 17-20, 2012, Montreal, Quebec, Canada (IEEE, USA,2012) 301
• [2] A. Ismail et al., Cancer/Radiothér 13, 182 (2009)[Crossref]
• [3] A. Holmes–Siedle, Nucl. Inst. & Meth., 121, 169 (1974)
• [4] A. B. Rosenfeld, In: S. Tavernier, A. Gektin, B. Grinyov (Eds.),NATO Advanced Research Workshop on Radiation Detectors forMedical Applications, September 19-23, 2003, Alushta, Crimea,Ukraine (Springer, Dordrecht, The Netherlands, 2006) 111-147
• [5] G. S. Ristić, http://www.apl.elfak.rs/RADFETs.pdf
• [6] Thomson/Nielesen a Best Medical Canada company, TechnicalNote 4: Introduction to the MOSFET Dosimeter, TN#101248.04,https://docs.google.com/gview?url=http://www.mosfet.ca/global/pdf/technotes/te_4.pdf&chrome=true
• [7] A. Holmes–Siedle, L. Adams, Int. J. Rad. Appl. Instrum., Part C:Radiation Physics and Chemistry 28, 235 (1986)
• [8] G. S. Ristić, J. Phys. D: Appl. Phys. 41, 023001 (2008)[Crossref]
• [9] N. T. Fourches, M. Nenoi (Ed.), Current Topics in Ionizing RadiationResearch (InTech, Rijeka, 2012) chap. 32, 741
• [10] M. G. Buehler, B. R. Blaes, G. A. Soli, G. R. Tardio, IEEE Trans.Nucl. Sci. 40, 1442 (1993)[Crossref]
• [11] R. A. Price, C. Benson, M. J. Joyce, K. Rodgers, IEEE Trans. Nucl.Sci. 51, 1420 (2004)[Crossref]
• [12] J. Kassabov, N. Nedev, V. Smirnov, Radiat. Eff. Defects in Solids116, 155 (1991)
• [13] N. G. Tarr, G. F. Mackay, K. Shortt, I. Thomson, IEEE Trans. Nucl.Sci. 45, 1470 (1998)[Crossref]
• [14] N. G. Tarr, K. Shortt, Y. Wang, I. Thomson, IEEE Trans. Nucl. Sci.51, 1277 (2004)[Crossref]
• [15] P. J. McNulty et al., Radiat. Prot. Dosim. 122, 460 (2006)[Crossref]
• [16] R. Edgecock et al., Evaluation of commercial programmablefloating gate devices as radiation dosimeters. J. Instrumentation4, P02002 (2009)[Crossref][WoS]
• [17] A. Kelleher, A. N. McDonnell, B. O’Neill, W. Lane, L. Adams, IEEETrans. Nucl. Sci. 41, 445 (1994)[Crossref]
• [18] G. S. Ristić, J. Phys. D: Appl. Phys. 42, 135101 (2009)[Crossref]
• [19] S. Alshaikh, M. Carolan, M. Petasecca, M. Lerch, P. Metcalfe,A. Rosenfeld, Australas Phys. Eng. Sci. Med. 37, 311 (2014)[Crossref]
• [20] M. N. Martin, D. R. Roth, A. Garrison-Darrin, P. J. McNulty,A. G. Andreou, IEEE Trans. Nucl. Sci. 48, 2050 (2001)[Crossref]
• [21] G.-W. Luo, Zh.-Yu Qi, X.-Wu Deng, A. Rosenfeld, Medical Physics41, 051710 (2014)[Crossref]
• [22] A. Aktag et al., Nucl. Instrum. Meth. Phys. Res., Section B-BeamInteractions with Materials and Atoms 268, 3417 (2010)
• [23] E. Monroy, F. Omnès, F. Calle, Semicond. Sci. Technol. 18, R33(2003)
• [24] D. J. Turnbull, P. W. Schouten, Atmos. Chem. Phys. 8, 2759(2008)
• [25] Ch.-H. Lin, and Ch. W. Liu, Sensors 10, 8797 (2010) and referencestherein[Crossref]
• [26] D. Nesheva et al., Vacuum 68, 1 (2003)[Crossref]
• [27] M. Curiel et al., Mat. Sci. Eng. B 174, 132 (2010)
• [28] D. Nesheva et al., Semicond. Sci. Technol. 23, 045015 (2008)[Crossref]
• [29] D. Mateos et al., NSTI-Nanotech 2013, vol.1, 396 (2013)
• [30] D. Mateos et al., Physica E: Low-dimensional Systems andNanostructures 51, 111 (2013)
• [31] D. Nesheva et al., In A.–A. Ameenah (Ed.), Quantum Dots – AVariety of New Applications (InTech, Rijeka, 2012) chap. 9, 183
• [32] N. Nedev et al., J. Phys.: Conf. Series 253, 012034 (2010)
• [33] N. Nedev et al., Sensor Lett. 10, 837 (2012)[Crossref]
• [34] D. Mateos et al., Key Eng. Mat. 543, 150 (2013)
• [35] S. M. Sze. Physics of Semiconductor Devices, 2nd edition (Wiley,New York, 1981)
• [36] K. J. Yang, C. Hu, IEEE Trans. Electron. Dev. 46, 1500 (1999)[Crossref]
• [37] J. R. Brews, MOS Physics and Technology (Wiley, New York,1982)
• [38] E. Yilmaz, B. Kaleli, R. Turan, Nucl. Instrum. Meth. Phys. Res. B264, 287 (2007)
• [39] A. Arias et al., Key Eng. Mat. 605, 380 (2014)
• [40] A. Arias et al., Sensor Lett. (in press)
• [41] V. V. Afanas’ev, M. Houssa, A. Stesmans, M. M. Heyns, App.Phys. Lett. 78, 3073 (2001)

Identyfikatory

DOI

10.1515/phys-2015-0006