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Tytuł artykułu

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
We fabricated a silicon (Si) laser by applying a dressed-photon–phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon- insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing lightwaveguides. We designed light waveguides having a thickness of 15 μm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 μm. The intensity of amplified spontaneous emission (ASE) lightwas too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm2 from the current– voltage characteristic. This threshold current density was twenty-eight times smaller than that of a Si laser we fabricated previously.
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Wydawca

Rocznik
Tom
1
Numer
1
Opis fizyczny
Daty
online
2015-04-28
Twórcy
autor
  • Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
autor
  • Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
autor
  • Department of Electrical Engineering and Information Systems, Graduate School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
autor
  • The National Institute of Information and Communications Technology, 4-2-1, Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
Bibliografia
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Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_1515_fma-2015-0001
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