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2006 | 4 | 1 | 117-123
Tytuł artykułu

Performance of lead iodide nuclear radiation detectors with the introduction of rare earth elements

Treść / Zawartość
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Lead iodide has been recognized as a promising material for room temperature radiation detectors. It has a wide band-gap (∼ 2.3 eV), high atomic numbers (82, 53) and it is environmentally very stable compared to mercuric iodide. Electrical and optical properties of lead iodide grown crystals purified under the influence of selected rare earth elements have been investigated. Photo-luminescence and capacitance-voltage measurements have been performed using different rare earth elements.
Wydawca

Czasopismo
Rocznik
Tom
4
Numer
1
Strony
117-123
Opis fizyczny
Daty
wydano
2006-03-01
online
2006-03-01
Twórcy
  • Electronics Engineering Department, Princess Sumaya University, RSS Str., P O Box 1438, Al-Jubaiha, 11941, Jordan, m.hassan@psut.edu.jo
  • Institute of Radio Engineering and Electronics, Czech Academy of Science, Chaberska 57, 182 51, Praha, Czech Republic
  • Institute of Radio Engineering and Electronics, Czech Academy of Science, Chaberska 57, 182 51, Praha, Czech Republic
Bibliografia
  • [1] J. Novák, S Hasenöhrl, M. Kuliffayová and J. Oswald: “Gettering properties of PrO2 in In0.53Ga0.47As LPE growth”, J. Cryst. Growth, Vol. 110, (1991), pp. 862–866. http://dx.doi.org/10.1016/0022-0248(91)90644-K
  • [2] B. Põdör, L. Csontos, K. Somogyi and D. Vignaud: “Photoluminescence and double crystal X-ray study of InGaAs/InP: Effect of rare earth (dysprosium) doping during growth”, Acta Phys. Pol. A, Vol. 87, (1995), pp. 465–468.
  • [3] A. Steckl, J. Heikenfeld, Lee Dong-Seon, M. Garter, C. Baker, W. Yongqiang and R. Jones: “Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices”, IEEE J. Sel. Top. Quant., Vol. 8, (2002), pp. 749–766. http://dx.doi.org/10.1109/JSTQE.2002.801690[Crossref]
  • [4] P. Favennec, H. Lapos-Haridon, M. Salvi, D. Moutonnet and Y. Le Guillou: “Luminescence of erbium implanted in various semiconductors IV, III-V and II-VI materials”, Electron. Lett., Vol. 25, (1989), pp. 718–719.
  • [5] I. Bolshakova, P. Koptsev, I. Melnyk, T. Moskovets, S. Krukovsky and D. Zayachuk: “Control of Parameters of III-V Compound Microcrystals and Epitaxial Layers by means of Complex Doping”, Cryst. Res. Technol., Vol. 36, (2001), pp. 989–996. http://dx.doi.org/10.1002/1521-4079(200110)36:8/10<989::AID-CRAT989>3.0.CO;2-C[Crossref]
  • [6] Y. Lee, G. Shu, I. Cheng, C. Chen, J. Shen, W. Uen, C. Chang, Y. Chen, W. Chou “Optical studies of the Holmium-doped InGaAsP epilayers”, physica status, Vol. 200, (2003), pp.439–445. http://dx.doi.org/10.1002/pssa.200306702[Crossref]
  • [7] D. Partin: “Lead telluride doped with rare-earth elements”, J. Appl. Phys., Vol. 57, (1985), pp. 1997–2000. http://dx.doi.org/10.1063/1.334385[Crossref]
  • [8] N. Veissid, C. An, A. Ferreira da Silva and J. Pinto de Souza: “Gap Energy Studied by Optical Transmittance in Lead Iodide Monocrystals Grown by Bridgman's Method”, Mater. Res., Vol. 2, (1999), pp. 279–281.
  • [9] T. Schlesinger, R. James, M. Schieber, J. Toney, J. Van Scyoc, L. Salary, H. Hermon, J. Lund, A. Burger, K.-T. Chen, E Cross, E. Soria E.K. Shah, M. Squillante, H. Yoon and M. Goorsky: “Characterization of lead iodide for nuclear spectrometers”, Nucl. Instrum. Meth. A, Vol. 380, (1996), pp. 193–197. http://dx.doi.org/10.1016/S0168-9002(96)00343-9[Crossref]
  • [10] M. Matuchova, K. Zdansky, M. Hassan, J. Zavadil, O. Prochazkova and J. Maixner: “Study of Influence of the Rare Earth Elements on the Properties of Lead Iodide”, In: 14 th International Conference on Crystal Growth (ICCG14), Grenoble, France, 2004.
  • [11] M. Hassan: “Lead Iodide Radiation Detectors Crystal Growth and Charecterization”, In: The XXV Conference on Solid State Physics and Material Science, Egypt, 6–10 March 2005, The Egyptian Materials Research Society (Eg-MRS), Cairo, Egypt, 2005.
  • [12] M. Hassan: “Extending the C-V method of establishing MIS detector quality to mercuric iodide radiation detectors”, Proc. Latv. Aca. Sc., Vol. 54, (2000), pp. 105–107.
Typ dokumentu
Bibliografia
Identyfikatory
Identyfikator YADDA
bwmeta1.element.-psjd-doi-10_1007_s11534-005-0010-x
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