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Optica Applicata
2011 Vol. 41, nr 3 727--734
EN The effect of multiple pulses of Ti:sapphire femtosecond laser system on silicon wafer was investigated. Using the pulse energy exceed the threshold of silicon to investigate the evolvement of structures and found that exceed certain fluence no any periodic structure will appearance. For 1.91 J/cm2,[...]
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Optica Applicata
EN Selective laser patterning of thin films in a multilayer film is an emerging technology for fabrication of MEMS devices. A 775 nm Ti:sapphire laser (130 fs, 1 kHZ) was used to irradiate the thin film stacks with variations in process parameters such as feed rate and numerical aperture of objective l[...]
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Optica Applicata
EN On the basis of n-type single-crystal (100) silicon substrate, a silicon p-n junction photodetector has been successfully developed. Three methods to improve photoresponse signal-to-noise ratio (SNR) were profoundly studied: the p-n junction depth was optimized to enhance the spectral responsivity w[...]
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