Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Znaleziono wyników: 7
first rewind previous Strona / 1 next fast forward last
help Sortuj według:

help Ogranicz wyniki do:
1
100%
Optica Applicata
EN We have developed a new technique for monitoring the facet heating in semiconductor lasers and for correlating these measurements with the performance and reliability of the device. The method is based on thermoreflectance, which is a modulation technique relying on periodic facet temperature modula[...]
2
100%
Optica Applicata
EN Spatially resolved micro-Raman measurements have been performed to determine temperature distribution over the facet of high power semiconductor diode lasers. This technique is non-invasive and allows one to study the local temperature on the surface of the mirror of semiconductor diode lasers under[...]
3
88%
Optica Applicata
EN In the high power semiconductor lasers, the surface of the mirror is the key element of the construction, which has the main impact on the reliability and degradation processes. In the case of lasers fabricated with the use of GaAs compounds the highest power emitted by the structure is limited by t[...]
4
76%
Optica Applicata
EN We present the results of reflectance investigations into SiO2/Si3N4 dielectric distributed Bragg reflectors (DBR). The dielectric multilayers forming reflectors have been deposited by plasma enhanced chemical vapour deposition (PECVD) on silicon substrates. Such structures can be utilised in vertic[...]
5
76%
Optica Applicata
EN A wide range of applications of high-power diode lasers is connected with the tendency towards device miniaturization resulting in increased power densities. To manage the thermal load, the chips or arrays of chips (the so-called laser lines or cm-bars) have to be mounted with low thermal resistance[...]
6
63%
Optica Applicata
EN In this paper we describe a number of optical techniques suitable for estimation of the semiconductor surface temperature. High spatially resolved thermoreflectance will be shown as a powerful tool to measure temperature distribution at the laser diode front facet. For determination of the absolute [...]
7
51%
Bulletin of the Polish Academy of Sciences. Technical Sciences
EN Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide con[...]
first rewind previous Strona / 1 next fast forward last