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1
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Materials Science Poland
EN The crystallographic and electronic band structure of In induced reconstruction of Si(335)-Au surface have been studied with reflection high electron energy diffraction and angle resolved photoemission spectroscopy in ultrahigh vacuum conditions. The photoemission spectra recorded along chains show [...]
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Electron Technology
EN Vicinal Si(111) surfaces were investigated by Reflection High Energy Electron Diffraction (RHEED). The samples were cut 14.42° off the (111) plane in (112) direction. The Si(533) plane with a regularly distributed terraces and monoatonic steps was obtained by depositing of 0.28 monolayer (ML) of Au [...]
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100%
Electron Technology
EN We have studied in situ the reflectance difference (RD) during depositon of ultrathin Pb epitaxial film onto Si(111)-(6x6)Au substrates held at 100 K in UHV conditions. S- and p-polarized radiation with energy within the range from 0.5 eV to 3.0 eV was used to excite electron transitions in the Pb s[...]
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100%
Electron Technology
EN The Pb film have been grown on Si(111)-(6x6)Au substrate. Electron transmission through the film was measured as a function of incident electron energy. Two types of structures were observed in collected current. One of them strongly depends on the thicknees of Pb layers, characteristic of the quant[...]
5
100%
Optica Applicata
EN The electronic band structure of the Si(557) and Si(335) surfaces covered with monoatomic Au chains produced in UHV conditions, is investigated in detail by angle-resolved photoelectron spectroscopy (ARPES), especially for the surface state bands near the Fermi energy. The ARPES spectra in the plane[...]
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