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1
100%
Elektronika : konstrukcje, technologie, zastosowania
PL Badano tranzystory TFT z polikrystalicznego GaN otrzymanego metodą reaktywnego sputteringu, osadzonych na płaskich periodycznych obszarach (nazwanych tarasami). Opracowano metodę pokrywania podłoży warstwami izolatora, półprzewodnika i kontaktów z metalu w jednym procesie technologicznym (bez zapowi[...]
EN We have developed the technology of thin film (TFT) transistors founded on polycrystalline GaN. GaN layers were deposited in sputtering unit SCM450 from Alcatel using RF=13,5 MHz bias and the 6N gallium target in the atmosphere of argon and nitrogen. Layers were deposited on Si and quartz substrates[...]
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Elektronika : konstrukcje, technologie, zastosowania
PL Zbadano możliwość uzyskania warstw GaN metodą reaktywnego sputteringu przy wykorzystaniu techniki selektywnego osadzania. Założono, że zastosowanie selektywności poprawi parametry warstw w stosunku do osadzanych w sposób nieselektywny . Selektywność osadzania warstw GaN w sputronie uzyskano, ogranic[...]
EN In this work, we tried to deposit GaN layer by reactive sputtering using technique of selective growth, on silicon substrate. We assumed that the selectivity correct parameters layers in compare with nonselective layer. In sputtering, dielectric tilms, used in ELO, don't assure selective grown. We [...]
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94%
Optica Applicata
EN Ta-doped In2O3 transparent conductive oxide (TCO) thin films are deposited on glass substrates by radio-frequency (RF) sputtering at room-temperature. The influence of sputtering power on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffractio[...]
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Optica Applicata
2010 Vol. 40, nr 4 751--757
EN Ti-doped In2O3 thin films have been prepared on glass substrate by radio frequency (RF) sputtering with different sputtering powers (90, 120, 150, and 180 W) at 330 °C. The influence of sputtering power on the structural, electrical and optical properties of the deposited thin films is investigated.[...]
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Materials Science Poland
2013 Vol. 31, No. 3 454--461
EN The transparent conducting titanium-gallium co-doped zinc oxide (TGZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering technique. The effects of working pressure on the structural, optical and electrical properties of the films were investigated. The results show th[...]
6
94%
Optica Applicata
EN This paper reports on the results of optimization of ohmic contacts for GaAs/AlGaAs quantum cascade lasers (QCLs). Technological parameters during optimization concerned surface preparation, evaporation method, and thermal treatment. The aim of this research was to obtain low resistance and time sta[...]
7
94%
Materials Science
EN Copper thin films have been deposited onto Corning glass substrates by means of two kinds of DC magnetron sputtering. The goal of this research was to study differences in thermal characteristics of both kinds of the films. The differences between these layers originate from the technological proces[...]
8
94%
Opto - Electronics Review
EN Gate-controlled diodes were made by using evaporated indium electrodes overlapping the edge of mesa diodes, isolated from the surface by a layer of ZnS or by native anodic oxide of InSb or HgCdTe. The resulting three-terminal device characteristics with gate voltage as a parameter have been investig[...]
9
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Optica Applicata
EN ZnO thin films doped with aluminum (AZO) were deposited on silicon dioxide covered type texturized Si substrates by radio frequency magnetron sputtering, to fabricate AZO/SiO2/p-Si heterojunction, as an absorber for ultraviolet cell. The microstructure, optical and electrical properties of the Al-do[...]
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84%
Elektronika : konstrukcje, technologie, zastosowania
PL Warstwy SiC o grubości około 1µm otrzymywano metodą sputteringu. SiC wygrzewano w piecu RTP. Określono wpływ parametrów, takich jak: rodzaj, skład i ciśnienie gazów w komorze reakcyjnej, moc RF generatora, odległość target-podłoże. Warstwy poddano analizie rentgenograficznej, badaniom transmisji i p[...]
EN Recently, silicon carbide (SiC) became interesting materials for high power, high frequency, high temperature applications etc. SiC has properties such as high breakdown electric field (2,2x10⁶ V/cm), thermal conductivity (3,0-3,8 W/cm K), high electron mobility and high resistance to chemical attac[...]
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Problemy Eksploatacji
2013 nr 3 169--179
PL Rentgenowska spektroskopia fotoelektronowa jest techniką analizy powierzchni. Polega na analizie rozkładu energii kinetycznej fotoelektronów emitowanych w wyniku wzbudzenia próbki charakterystycznym promieniowaniem rentgenowskim. Pozwala na uzyskanie informacji o obecnych pierwiastkach oraz o wzajem[...]
EN X-ray photoelectron spectroscopy (XPS) is a dedicated surface characterisation spectroscopy. It reveals which chemical elements are present at the surface, it informs us about the chemical bound nature which exists between these elements. An appropriate data processing leads to the specimen elementa[...]
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Problemy Eksploatacji
2015 no. 3 39--48
PL W wielu dziedzinach nauki i techniki niezbędne jest zastosowanie nieniszczących metod analizy. Do takich metod należy skaningowa spektroskopia elektronów sprzężona z mikroanalizą rentgenowską (SEM/EDS) oraz rentgenowska spektroskopia fotoelektronów (XPS), a wyniki uzyskiwane za ich pomocą często są [...]
EN In many fields of science and technology, it is necessary to apply non-destructive methods of analysis. Such non-destructive methods include scanning electron microscopy coupled with energy-dispersive X-ray spectroscopy (SEM/EDS) and X-ray photoelectron spectroscopy (XPS), and the results obtained w[...]
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Journal of Automation Mobile Robotics and Intelligent Systems
EN Sensors based on surface plasmon resonance (SPR) are widespread in modern devices of biochemical application. As a rule, a technique of diagnostic is a measurement of angle dependence of the refraction index from incident angle of p-polarised monochromic light R( ) from the substrate at plasmon exci[...]
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Optica Applicata
2011 Vol. 41, nr 2 463--469
EN In this work, structural and optical properties of vanadium oxides have been presented. Thin films were manufactured by microwave-assisted magnetron sputtering process. Particles were sputtered from a vanadium target in Ar/O2 atmosphere. Oxygen partial pressure was changing from 3×10-4 to 7×10-4 Tor[...]
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Molecular and Quantum Acoustics
2002 Vol. 23 405-412
EN By means of X-ray diffraction analysis and Raman spectroscopy the process of crystallisation of PZT-type thin films was studied. RF-magnetron sputtering of the multicomponent ceramic targert ((Pb0.97Ba0.01Ca0.01Sr0.005)(Zr0.52Ti0.46)O3 + 1.4wt.%Bi2O3 + 0.3wt.%GeO) employed to the thin film fabricati[...]
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Nukleonika
EN The main experimental results related to the problems associated with in-vessel mirrors in ITER obtained with the DSM-2 facility at the Kharkov Institute of Plasma Physics over the past few years are described and discussed. Mirrors made from various polycrystalline (Be, Al, SS, Cu, Mo, Ta, W) and s[...]
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Nukleonika
EN Experimental results of irradiation effects by heavy ions with high inelastic energy losses at the surfaces of some amorphous alloys are presented. It was shown that all studied alloys strongly swelled: up to 15% for Ni58Nb42 under irradiation with the 305 MeV 86Kr ion at a fluence of 1015 ion/cm2. [...]
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Materials Science Poland
2016 Vol. 34, No. 4 735--740
EN This work investigates the influence of titanium thin films on the mechanical properties of AA 2024 substrates. The Scanning Electron Microscope (SEM) measurements confirm that the surface morphology of Ti thin film depends on controlled deposition rate and the energy-dispersive X-ray (EDX) result r[...]
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Computer Methods in Materials Science
2017 Vol. 17, No. 3 153--165
PL Osadzanie i ponowne rozpylania cienkiej warstwy NixTi|.x w magnetronowej komorze napylającej było symulowane z zastosowaniem modelowania wieloskalowego. Rozpylanie Ni i T oraz transport rozpylanych atomów przez gaz w komorze symulowano metodą Monte Carlo, a osadzanie rozpylanych atomów na powierzchn[...]
EN Deposition and re-sputtering of Ni-Ti thin films by magnetron sputtering was simulated using a multi-scale modeling approach. The sputtering of Ni and Ti targets and the transport of sputtered Ni and Ti atoms through the background gas were simulated using a Monte-Carlo approach, while the depositio[...]
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Opto - Electronics Review
EN Oscillations of the surface lattice parameter were observed by RHEED during the homoepitaxial growth of (001) CdTe by molecular beam epitaxy (MBE) and atomic layer epitaxy (ALE). The oscillations are associated to a deformation, induced by the surface reconstruction, at the free edges of the small 2[...]
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