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1
100%
Tribologia
1999 nr 3 397-409
PL Przedstawiono wyniki badań nanomechanicznych krzemu krystalicznego typu N i P oraz polikrzemu jako materiałów konstrukcyjnych dla mikrosystemów (MEMS).Podano twardość oraz moduł sprężystości.Omówiono talże wpływ orientacji krystalicznej krzemu na jego własności mechaniczne. Zamieszczono porównanie [...]
EN Nanomechanical chracterization of N-type, P-type single crystal silicon and polysilicon engineering, structural materials for Micro Electro Mechanical Systems (MEMS) was carried out and hardness and modulus of elasticity are given and discussed. The effect of crystal orientation ( <100> and < 111>[...]
2
80%
Computer Methods in Materials Science
2013 Vol. 13, No. 3 407--411
PL W pracy wykorzystano oprogramowanie termodynamiczne FACT i bazę danych SINTEF dla krzemu o wysokiej czystości do oceny oddziaływania pomiędzy zagęszczającymi pierwiastkami borem i fosforem oraz typowymi pierwiastkami (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, N, Na, Ni, O, Sn, Ti, V, Zr) stanowiącymi zanie[...]
EN Using the thermodynamic software FACT, and the SINTEF database for high purity silicon, the interaction coefficients between the doping elements boron and phosphorus and a range of impurity elements (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, N, Na, Ni, O, Sn, Ti, V, Zn, Zr) have been calculated in liquid s[...]
3
80%
Materials Science Poland
2013 Vol. 31, No. 3 350--356
EN In an effort to synthesize doped ZnO nanowires, SiOx nanowires were obtained accidently. In the experiment, mixed powders containing chemicals such as ZnO, graphite, Ga2O3, and In2O3 were placed in the center of a tube furnace, where the temperature was set to 1200 °C and the vacuum was approximatel[...]
4
80%
Materials Science Poland
2008 Vol. 26, No. 3 751--757
EN The influence of thermal treatment on magnetic properties of Si/Mn crystals grown by the Czochralski and by floating zone methods and implanted with Mn+ ions was studied by the SQUID magnetometry and electron spin resonance. Depending on thermal and hydrostatic pressure annealing conditions, three g[...]
5
80%
Opto - Electronics Review
EN Liquid crystal (LC) phased arrays and gratings have been employed in optical switching and routing [1]. These diffractive optic elements are of great interest because they can be scaled up to a large number of elements and their optical properties can be electrically addressed with a low driving vol[...]
6
80%
Materials Science
EN Age-related macular degeneration (AMD) is the leading cause of irreversible visual loss in people between 65 and 74 years. Recently, the photodynamic therapy (PDT) is used as experimental treatment for exudative AMD. In a PDT process, a reaction takes place when a photosensitiser (PS), light of appr[...]
7
80%
Materials Science
EN Colloidal silica can be used for final general metallographic polishing. It is used to polish single crystal silicon for electronic applications and, subsequently, polycrystalline silicon for solar cells, gallium arsenide, indium phosphide, titanium, gadolinium gallium garnet and sapphire. The silic[...]
8
80%
Bulletin of the Polish Academy of Sciences. Chemistry
EN Two methods of (29) Si NMR calculations, GIAO-HF and GIAO-B3LYP /6-311+G(2d,p) were compared for a series of simple silicon compounds. The (29) Si isotropic chemical shifts obtained by both methods are in reasonable agreement with the experi-ment, although the GIAO-HF method predicts the chemical sh[...]
9
80%
Prace Naukowe Instytutu Podstaw Elektrotechniki i Elektrotechnologii Politechniki Wrocławskiej. Konferencje
EN Degradation of interface and film properties during constant voltage and constant current stress of Ta2Os films grown on silicon was studied. It was shown that the degradation consists of positive and negative charge trapping and thinning of the extremely thin silicon dioxide created between the Ta2[...]
10
80%
Elektronika : konstrukcje, technologie, zastosowania
11
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Materiały Elektroniczne
EN Previous works on silicon micromachined devices started in the Institute of Microsystems Technology (ITM) of the Wroclaw University of TEchnology (WUT) in late 80's, although some fundamental technological works on silicon anisotropic etching for three-dimensional structures fabrication were done[...]
12
80%
Journal of Telecommunications and Information Technology
2005 nr 1 94-97
EN Analytical model, design principles, technology and test results concerning a thermal conductivity detector (TCD) are presented. Prototype TCD units fabricated using the standard silicon IC VLSI and MEMS techniques are reported. The detectors are integrated with gas separation columns and micro-valv[...]
13
80%
Materials Science Poland
2016 Vol. 34, No. 4 916--923
EN The energy band structures and electron (hole) effective masses of perfect crystalline silicon and silicon with various vacancy defects are investigated by using the plane-wave pseudopotential method based on density functional theory. Our results show that the effect of monovacancy and divacancy on[...]
14
80%
Journal of Achievements in Materials and Manufacturing Engineering
2012 Vol. 55, nr 2 712--715
EN Purpose: Views on the reduction of SiO2 at the blast furnace process began to change in the mid 70s. Nowadays it is claimed that the silicon appears in the metal not only from the slag SiO2 reduction at the liquid phase, but also from a gaseous SiO. Presented in this paper, la[...]
15
80%
Izolacje
PL Na rynku budowlanym stale powiększa się liczba wyrobów opartych na silikonach. Wynika to z ich szczególnych właściwości fizykochemicznych, nadających pożądane cechy uzytkowe i gwarantujących spełnianie wymogów niemozliwych do osiągnięcia przy zastosowaniu innych środków.
16
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Materials Science Poland
2019 Vol. 37, No. 3 482--487
EN The SiN/SiO2 stack is widely used to passivate the surface of n-type monocrystalline silicon solar cells. In this work, we have undertaken a study to compare the stack layer obtained with SiO2 grown by both rapid thermal and chemical ways to passivate n-type monocrystalline sil[...]
17
70%
Optica Applicata
2011 Vol. 41, nr 3 727--734
EN The effect of multiple pulses of Ti:sapphire femtosecond laser system on silicon wafer was investigated. Using the pulse energy exceed the threshold of silicon to investigate the evolvement of structures and found that exceed certain fluence no any periodic structure will appearance. For 1.91 J/cm2,[...]
18
70%
Materials Science Poland
EN An electrical equivalent circuit of Al-(thermal)SiO2-(n)Si structure has been proposed and the results of analysis of circuit parameters have been compared with classical methods of investigations of metal-insulator-semiconductor (MIS) structures. The electrical equivalent circuit of the structure c[...]
19
70%
Opto - Electronics Review
EN Solar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaic’s industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already [...]
20
70%
Opto - Electronics Review
EN Cluster models and quantum chemical methods were used to investigate electronic structure and properties of defects in silicon, including extended defects of crystals, such as surface and interphases dislocations, which create regions of compression anf strain. Pressure effect was simulated by reduc[...]
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