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Optica Applicata
EN Modulation spectroscopy, i.e., photoreflectance (PR) and contactless electroreflectance (CER) are very powerful techniques to investigate optical properties of nanostructures. These techniques together with photoluminescence spectroscopy were used for investigation of optical properties of InGaAsP q[...]
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80%
Optica Applicata
EN Experimental and theoretical considerations and results on the effect of nitrogen incorporation on the oscillator strength of optical transitions in InGaNAs/GaAs quantum wells (QWs) are presented. Therefore, a set of dilute nitride quantum well structures was grown by molecular beam epitaxy. Optical[...]
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Przegląd Elektrotechniczny
PL Zbadano charakterystykę widmową lasera GaInAs. Przeanalizowano właściwości polaryzacyjne promieniowania oraz opisano teoretycznie charakterystykę emisyjną.
EN Luminescence spectra of the quantum-well heterolasers in the GaInAs-GaAs-AlGaAs system are measured, polarization properties of the radiation are analyzed and theoretical description of the emission characteristics is given.
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Optica Applicata
EN In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of optical transitions and the value of the built-in electric field have been determined from CER spect[...]
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Materials Science Poland
2017 Vol. 35, No. 4 893--902
EN A theoretical study of electronic structures and optical properties of GaInNAs/GaAs quantum wells has been performed. The inhomogeneous distributions of indium and nitrogen atoms along the growth direction were discussed as the main factors having significant impact on the QWs absorption efficiency.[...]
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Journal of Automation Mobile Robotics and Intelligent Systems
EN To investigate the dependence of electron g-factor on magnetic field in GaAs / AlGaAs quantum wells time-resolved photoluminescence measurements under a high magnetic field in different experimental configuration, the magnetic field perpendicular (g up tack ) and parallel (g II) to the quantum confi[...]
7
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Opto - Electronics Review
EN This paper mainly presents a theoretical analysis for the characteristics of quantum dot infrared photodetectors (QDIPs) and quantum wire infrared photodetectors (QRIPs). The paper introduces a unique mathematical model of solving Poisson's equations with the usage of Lambert W functions for infrare[...]
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Opto - Electronics Review
EN We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques from different well width MOCVD grown GaN/Al₀.₀₇Ga₀.₉₃N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples be[...]
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Optica Applicata
EN The purpose of this paper is to outline the principles of optical characterisation of the new kind of semiconductor devices: vertical-external-cavity surface-emitting lasers (VECSELs). Realisation of high efficiency semiconductor devices requires high accuracy of epitaxial process. Gain characterist[...]
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Optica Applicata
2014 Vol. 44, nr 1 135--146
EN Drift-diffusion computer simulation model available in Synopsys’ Sentaurus TCAD User Guide is used to study electrical and optical characteristics of a separate-confinement heterostructure laser based on AlGaAs. We investigate the role of the width and depth of quantum-well active region, below and [...]
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Optica Applicata
EN Quantum well solar cell with GaAs wells and AlxGa1-xAs barriers was optimized. Particular emphasis was placed on enhancing the efficiency. Open-circuit voltage, short-circuit current density, fill factor have been also optimized. Many simulations of various structures were carried out. The conversio[...]
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Materials Science Poland
2013 Vol. 31, No. 4 489--494
EN Determination of indium and nitrogen content in InGaAsN quantum wells (QWs) is often based on the analysis of highresolution X-ray diffraction (HRXRD) measurements. The comparison of diffraction curves of two similar samples, with and without nitrogen, together with an assumption of constant indium [...]
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Opto - Electronics Review
EN The work describes multiband photon detectors based on semiconductor micro- and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and intern[...]
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Opto - Electronics Review
2019 Vol. 27, No. 2 219--223
EN We review recently proposed concepts of infrared and terahertz photodetectors based on graphene van der Waals heterostructures and HgTe-CdHgTe quantum well heterostructures and demonstrate their potential.
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Przegląd Elektrotechniczny
2017 R. 93, nr 8 13--16
PL W niniejszej pracy zaprezentowano wyniki obliczeń struktury pasmowej i widm wzmocnienia optycznego dla studni kwantowych Ge/Ge1-xSnx/Ge. Dokonano optymalizacji składu x i grubości studni d do zastosowań w laserach półprzewodnikowych, w wyniku której uzyskano propozycje korzystnych wartości parametró[...]
EN In this work band structure and optical gain was calculated for Ge/Ge1-xSnx/Ge quantum wells. Ottomanization of x composition and the thickness of the well d were made for use in semiconductor lasers. As a result of optimization achieved the optimum parameter values of quantum wells: 0.15 < x < 0.17[...]
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Prace Instytutu Elektrotechniki
2012 Z. 255 7-18
PL Pomimo rozwoju, który nastąpił w technologii wytwarzania białych elektroluminescencyjnych źródeł światła, w urządzeniach tych ciągle istotną ograniczającą rolę pełni zjawisko spadku sprawności generacji światła dla dużych gęstości prądu. Ponadto wciąż nierozpoznane dostatecznie są jego fizyczne pods[...]
EN Despite the development that occurred in the technology of white Light-Emitting Diodes, this devices are still limited by the phenomenon of the efficiency droop that occurs in light generation for large current densities. Moreover, its physical basis is still not sufficiently recognized. The paper p[...]
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