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1
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Optica Applicata
EN The time-dependent electron transport through a multi-terminal quantum dot system is studied. External microwave fields with arbitrary amplitudes, phases and frequencies are applied to different parts of the system considered. The dependence of the average current and average differential conductanc[...]
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80%
Materials Science Poland
2008 Vol. 26, No. 4 1083--1090
EN Transport properties of a single level quantum dot attached to non-collinearly polarized magnetic leads and under the influence of external magnetic field have been analyzed theoretically. Description of the considered system has been modeled by the Anderson Hamiltonian with the finite Coulomb repul[...]
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Materials Science Poland
2007 Vol. 25, No. 4 1243--1249
EN It is shown theoretically that indirect interaction between two quantum dot levels can generate an anomalous phase shift for a system of the dot placed in one of the arms of the Aharonov-Bohm ring. The interaction between levels arises from the non-conservation of the orbital quantum number during t[...]
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Materials Science Poland
2004 Vol. 22, No. 4 523--528
EN Electron tunnelling through a spin-split discrete level of an interacting quantum dot coupled to two ferromagnetic electrodes (leads) is investigated theoretically in the sequential-tunnelling regime. Spinsplitting of the dot level is induced by an effective exchange interaction between the spin on [...]
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Materials Science Poland
2004 Vol. 22, No. 4 481--495
EN In this paper, we show that it is possible to manipulate the many-body wave function of an isolated dot with a few electrons by locally applying magnetic and electric fields. We polarize the dot at a level crossing, where the sensitivity is at its maximum. Time-dependent fields produce a superpositi[...]
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Materials Science Poland
2004 Vol. 22, No. 4 445--460
EN The influences of non-Fermi liquid correlations and spin-orbit scattering on the transport properties of quantum nanostructures connected to interacting leads are studied. Signatures of the spin are investigated in the transport. One-dimensional quantum dot is studied in the sequential tunnelling re[...]
7
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Materials Science Poland
2008 Vol. 26, No. 4 879--883
EN We study theoretically spin-polarized transport in double barrier tunneling junctions based on a single level quantum dot interacting with a local phonon mode. It is shown that the electron-phonon interaction gives rise to oscillations of the tunnel magnetoresistance (TMR). In asymmetrical junctions[...]
8
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Materials Science Poland
2008 Vol. 26, No. 3 708--714
EN Electronic transport through two single-level quantum dots attached in parallel to ferromagnetic leads has been analyzed theoretically. The intra-dot Coulomb correlation was taken into account, while the inter-dot hopping and Coulomb repulsion have been neglected. The dots, however, may interact via[...]
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Materials Science Poland
2007 Vol. 25, No. 2 435--439
EN The magnetic field dependence of coherent transport through a pair of wires attached to two Aharonov-Bohm rings with embedded double dots is considered. The double dots are electrostatically coupled. The many-body problem is studied within the mean field slave boson approach and complementarily by t[...]
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Materials Science Poland
2007 Vol. 25, No. 2 545--552
EN Spin-dependent transport through two coupled single-level quantum dots attached to ferromagnetic leads with collinear (parallel and antiparallel) magnetizations is analyzed theoretically. The intra-dot Coulomb correlation is taken into account, whereas the inter-dot Coulomb repulsion is neglected. T[...]
11
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Opto - Electronics Review
EN In this work we discuss the influence of the atomic force microscopy (AFM) probe tip geometry and the object - quantum dot form on the quantum dots dimension in the growth plane reconstructed from the AFM measurements. It is shown that ignoring the geometry of the probe tip and the quantum dot leads[...]
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Optica Applicata
EN We investigate the transient electron transport through the quantum dot and double quantum dot systems coupled with the time-dependent barriers to infinitely large reservoirs of noninteracting electrons. Time-dependent currents and quantum dot occupancies are calculated using both nonequilibrium Gre[...]
13
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Opto - Electronics Review
2017 Vol. 25, No. 2 137--147
EN Quantum dots, due to their unique optical properties, constitute significant materials for many areas of nanotechnology and bionanotechnology. This work presents a review of researches dedicated to the interaction between quantum dots (QDs) with human serum albumin (HSA) and human cell culture as im[...]
14
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Schedae Informaticae
2005 Vol. 14 95-111
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International Letters of Chemistry, Physics and Astronomy
2013 Vol. 2 36-48
EN A theoretical model was developed using GreenˇŚs function with an anisotropic elastic tensor to study the strain distribution in and around three dimensional semiconductor pyramidal quantum dots formed from group IV and III-V material systems namely, Ge on Si, InAs on GaAs and InP on AlP. A larger p[...]
16
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Optica Applicata
2011 Vol. 41, nr 4 911--919
EN The temperature dependent photoluminescence (PL) spectra measured from localized-state material system is presented. Two localized-state heterosystems, including InGaN/GaN multi-quantum well (MQW) and InAs/GaAs quantum dot (QD) samples were prepared. The samples were investigated both experimentally[...]
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Opto - Electronics Review
EN The reduction of the dark current without reducing the photocurrent is a considerable challenge is developing far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low dark current, a QD-based structure is an appropriate choice for terahertz detectors. The wo[...]
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61%
Materials Science Poland
2006 Vol. 24, No. 3 695--700
EN Resonant tunnelling through a non-interacting single-level quantum dot attached to ferromagnetic leads is analysed theoretically. The magnetic moments of the leads are assumed to be non-collinear. Apart from this, an external magnetic field is applied to the system, which is non-collinear with the m[...]
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Opto - Electronics Review
EN The work describes multiband photon detectors based on semiconductor micro- and nano-structures. The devices considered include quantum dot, homojunction, and heterojunction structures. In the quantum dot structures, transitions are from one state to another, while free carrier absorption and intern[...]
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Opto - Electronics Review
EN This paper discusses key issues related to the quantum dot infrared photodetector (QDIP). These are the normal incidence response, the dark current, and the responsivity and detectivity. We attempt to address the following questions of what is QDIP' s potential, what is lacking, and what is needed t[...]
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