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Advances in Materials Science
EN The n-type silicon with (111) orientation and resistivity of 8-12 .źcm was electrochemically etched. The results obtained by electrochemical etching of silicon in 0.1M NH4F (pH4.5), 0.1M NH4F (pH4.0) and 0.2M NH4F (pH4.0) electrolytes, indicates that slight increase of the NH4F concentration by 0.1M[...]
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Opto - Electronics Review
EN The feasibility of improvement in multicrystalline silicon (mc-Si) solar cells is considered by applying porous silicon (PSi) layers obtained and modified with chemical double-step method. PSi layers have a different diameter of pores which determines electrical and optical characteristics of solar [...]
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Journal of Telecommunications and Information Technology
2001 nr 1 53-56
EN Porous silicon shows some interesting features for micromechanical applications. Some applications make use of its high surface-to-volume ratio. A capacitive gas or humidity sensor using the adsorption of gases on the porous surface can be easily fabricated. However an opportunity for more sensitive[...]
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Advances in Materials Science
EN This work reports on the possible use of microporous silicon as a temperature sensor. This work is based on previous published works [7, 8, and 9]. The device is based on hydrocarbon group (CHx) / porous silicon (PS) /Si structure. The porous sample was coated with hydrocarbons groups deposited by t[...]
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Materials Science Poland
2009 Vol. 27, No. 2 603--610
EN A porous silicon sensor was investigated as a means to determine the response specificity for organic vapours. Porous silicon layers were fabricated by electrochemical anodization of p-type crystalline silicon in an HF ethanol solution under various conditions. The porous silicon sensors were placed[...]
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Opto - Electronics Review
EN Porous silicon (PSi) layer as gas sensor, based on the change in photoconductivity, photoluminescence and admittance has been presented. PSi layer was prepared by electrochemical dissolution of p-type silicon wafer in HF. Photovoltage curves, photoluminescence spectra (PL) and admittance spectra hav[...]
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Opto - Electronics Review
EN The purpose of work is to improve the performance of standard screen - printed silicon solar cells by incorporating a method by forming a porous silicon (PS) layer on the top surface of large area n+/p monocrystalline, multicrystalline and textured silicon solar cells by electrochemical etching in[...]
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Opto - Electronics Review
EN In this work application of porous silicon (PS) to c-Si solar cells is presented. The PS layer is formed between the fingers of the Al grid contact by the method of stain etching. The short circuit current, Isc, of the solar cells with PS between the grid contacts increases of 30-40% comparing wit[...]
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Opto - Electronics Review
EN The silicon solar cells with PS /n+/ p-Si structure (PS - porous Si) have been realised. Porous silicon obtained by stain etching or by electrochemical etching on standard alkaline textured surface has reduced effective reflectance coefficient to about 3% in a wavelength range of 400-1000 nm. Improv[...]
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Opto - Electronics Review
EN The purpose of the present paper was technology development of generation of efficient and cost - effective porous silicon (PS) based antireflection coating (ARC), which would be the best adapted to the silicon solar cell (SC) processing sequence. Owing to optimisation of anodisation process conditi[...]
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Opto - Electronics Review
EN Macroporous silicon prepared in n-type silicon have been used for a photosensitive device formation. Boron-doped spun-on layer was applied for p+ emitter formation of the devices. The obtained structures were investigated by AFM and electron microscopy, photosensitivity and the photocurrent spectra [...]
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Machine Dynamics Research
EN We propose to use technology of electrochemical formation of low-dimensional porous silicon(porSi), which is compatible with the standard technologies of silicon VLSI, for creation of sensor part of MEMS "Lab-on-chip" type.
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Archives of Metallurgy and Materials
PL Przedstawiono wyniki badań własności optycznych i mikrostrukturalnych gradientowej warstwy z porowatego krzemu naniesionej metodą chamicznego trawienia. Podłożem były płytki polerowanego krzemu typu p z uformowanym złaczem n+-p. Do symulacji własności wynikających z istniejącego gradientu założono w[...]
EN In this work we present the results of investigations of porous silicon (PS) layers for solar cells application. The PS was formed by chemical etching (stain etching) of n+-p Si substrate in a solution of HF, HNO3 and H2O. The dielectric response of a PS layer was modeled using a Bruggeman effective[...]
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Archives of Metallurgy and Materials
PL W pracy przedstawiono metodę uzyskania redukcji odbicia fektywnego ( Eeff) poniżej 10% od powierzchni krzemu multikrystalicznego ( mc-Si ) dla promieniowania w zakresie 400÷1100 nm długości fali. Metoda polega na chemicznym trawieniu powierzchni mc-Si w roztworach na bazie HNO3:HF i wytworzeni[...]
EN The porous silicon (PSi) layers have been studied in the aspect of their application in the multicrystalline silicon (mc-Si) solar cells. The macroporous layers were prepared by double-step chemical etching prior to the donor diffusion. They have been investigated using scanning (SEM) and transmissi[...]
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Materials Science Poland
EN The improvement of optical confinement on the back crystalline silicon solar cell is one of the factors leading to its better performance. Porous silicon (PS) layer can be used as a back reflector (BR) in solar cells. In this work, single layers of porous silicon were grown by electrodeposition on a[...]
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Opto - Electronics Review
EN Photoluminescence (PL) spectra and excitation spectra (PLE) (under steady-state conditions), time resolved spectra (PL-TRS) and decay curves of photoluminescence (PL-DC) in micro- and nanosecond range (under pulsed operation) at different temperatures (10 K-room) on anodically etched boron–doped sil[...]
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Opto - Electronics Review
EN Photoluminescence (PL) and photoluminescence excitation (PLE) spectra studies as well as SIMS and FTIR methods were used for investigation of PL excitation mechanism of porous silicon (PS). It is shown that there are two types of PS PLE spectra, which consist of either two bands (visible and ultravi[...]
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International Letters of Chemistry, Physics and Astronomy
2013 Vol. 3 29-36
EN Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silic[...]
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Optica Applicata
EN In the paper some surface structurization methods are presented. Wet and/or dry etching, and thermal oxidation process have been used to form arrays of gated and non-gated sharp silicon microtips on a silicon wafer. A transfer mold technique (mold) has been applied to produce arrays of silicon carbi[...]
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Elektronika : konstrukcje, technologie, zastosowania
PL Krzem porowaty jest coraz częściej stosowany w technologii przyrządów krzemowych. W artykule opisano proces otrzymywania krzemu porowatego przez elektrochemiczne trawienie krzemu w HF oraz zależność mikrostruktury od warunków trawienia. Podano przykłady najważniejszych zastosowań. Zainteresowanie ty[...]
EN Porous silicon (PS) is a promising materiał for silicon devices technology. This paper gives a short description of the PS formation by the electrochemical dissolution of silicon in HF and the dependence of its microstructure on the anodization conditions. In the following a brief overview of the mo[...]
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