Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
Znaleziono wyników: 12
first rewind previous Strona / 1 next fast forward last
Wyszukiwano:
w słowach kluczowych:  MOVPE
help Sortuj według:

help Ogranicz wyniki do:
1
100%
Optica Applicata
EN AlGaN/GaN heterostructures attract attention of many research groups over the last decade because of their superior properties (high mobility and saturation velocity of 2DEG) and strong capability in high frequency/power electronics and sensors applications. One of the factors which reduces the mobi[...]
2
100%
Opto - Electronics Review
EN Nitride semiconductor alloys have merged as the most promising materials for short wavelengths light emiting diodes (LEDs) and laser diodes (LDs). The GaInN multiquantum wells (MQW) structure was used as the active part of LDs and has presently proven to work at room temperature in cw mode for 10,00[...]
3
100%
Journal of Telecommunications and Information Technology
2002 nr 1 8-10
EN The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V compounds makes MOVPE techniques very attractive [...]
4
89%
Elektronika : konstrukcje, technologie, zastosowania
PL W pracy przedstawiono podstawowe problemy technologiczne związane z otrzymywaniem metodą LP MOVPE warstw heteroepitaksjalnych azotku galu na podłożach z węglika krzemu. Przedstawiono wyniki charakteryzacji buforowych warstw epitaksjalnych GaN na SiC otrzymywanych przy różnych ciśnieniach. Przydatnoś[...]
EN The main aspects of LP MOVPE GaN on SiC substrates were discussed. The influence of GaN growth pressure on crystal quality and surface morphology of GaN layers was investigated by atomic force microscopy (AFM) and high resolution x-ray diffraction (HRXRD). The HEMT structures based on AlGaN/AlN/GaN [...]
5
88%
Opto - Electronics Review
EN Photoluminescence and reflectance studies of MOVPE grown GaN samples were performed. From reflectance measurements optical constants were calculated by means of Kramers-Kronig analysis in the energy region 0-6 eV.
6
88%
Opto - Electronics Review
EN A high-quality AlGaN layer with a low density of threading dislocations is realised for the use of ultraviolet (UV) light-emitting diodes (LEDs). The new crystal growth method of using a GaN seed crystal with (1122) facets and lateral growth of Al₀.₂₂Ga₀.₇₈N through the low -temperature-deposited Al[...]
7
88%
Materials Science Poland
2016 Vol. 34, No. 4 872--880
EN The main goal of the studies on epitaxial regrowth process of InP on patterned substrates is to gain knowledge about growth rates and interface quality on various areas to improve the fabrication technology for future applications. Prepared samples were measured at every step of the process by scann[...]
8
75%
Optica Applicata
2016 Vol. 46, nr 2 241--248
EN Quantum cascade laser is one of the most sophisticated semiconductor devices. The active region of the quantum cascade laser consists of hundreds thin layers, thus the deposition precision is the most crucial. The main technique for the fabrication of quantum cascade laser structure is molecular bea[...]
9
75%
Bulletin of the Polish Academy of Sciences. Technical Sciences
EN In this work studies of MOVPE growth of InAlGaAs/ AlGaAs/GaAs heterostructures are presented. The HRXRD and SIMS measurements indicate the high structural and optical properties as well as high uniformity of thickness and composition of InAlGaAs quantum wells. This work is the first step towards ela[...]
10
71%
Elektronika : konstrukcje, technologie, zastosowania
PL Od 2003 r. w laboratorium VIGO/WAT prowadzono badania nad wzrostem heterostruktur Hg1-xCdxTe o niemal dowolnych profilach składu i poziomie domieszkowania, niezbędnych dla zaawansowanych przyrządów fotoelektrycznych. MOCVD w zastosowaniu do Hg1-xCdxTe jest jedną znajtrudniejszych technologii epitaks[...]
EN Since 2003 VIGO System S.A. together with MUT (Military University of Technology) are doing joint efforts to improve MOCVD growth of Hg1-xCdxTe. Photodetectors optimized for any wavelength within 1-15 um spectral range requires complex heterostructures with multiple layers with homogeneous compositi[...]
11
71%
Elektronika : konstrukcje, technologie, zastosowania
PL Kwantowe lasery kaskadowe (QCLs), tzw. lasery unipolarne, które emitują fale o długości z zakresu okna atmosferycznego 3…5 μm, wymagają zastosowania układu materiałowego o dużej nieciągłości pasma przewodnictwa i bardzo dobrej przewodności cieplnej. Wymagania te spełnia układ materiałowy InGaAs/AlIn[...]
EN Quantum cascade lasers (QCL) so-called unipolar lasers, which emit light with wavelength at range of atmospheric window 3÷5 μm, require construction from the material system with sufficient conduction band discontinuity and high thermal conductivity. Such requirements are fulfilled by InGaAs/AlInAs/[...]
12
45%
Optica Applicata
EN We present the use of photoreflectance (PR) spectroscopy combined with the standard photoluminescence (PL) and electroluminescence (EL) for the room temperature optical investigation of strained-layer multiple quantum well (MQW) In/sub x/Ga/sub 1-x/As/GaAs light emitting diode (LED) for 1040 nm. In [...]
first rewind previous Strona / 1 next fast forward last