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280 nm UV LEDs grown on HVPE GAN substrates

Yasan A., McClintock R., Mayes K., Darvish K., Kung P., Razeghi M., Molnar R. J.

Opto-Electronics Review

2002

Vol. 10, No. 4

287-289

We report on the enhancement of optical and electrical properties of 280 nm UV LEDs using low dislocation density HVPE- grown GaN substrate. Compared with the same structure grown on sapphire, these LEDs show ~30% reduction in current - voltage differential resistance, ~15% reduction in turn-on voltage, more than 200% increase in output power slope efficiency and saturation at higher currents. Lower density of defects due to higher material quality and better heat dissipation are believed to be the reason behind these improvements.

III-Nitride wide bandgap semiconductors : a survey of the current status and future trends of the material and device technology

Kung P., Razeghi M.

Opto-Electronics Review

2000

Vol. 8, No. 3

201-239

During the past decade, group III-Nitride wide bandgap semiconductors have become the focus of extremely intensive reearch because of their exceptional physical properties and their high potential for use in countless numbers of applications. Nearly all aspects have been investigated, from the fundamental physical understanding of these materials to the development of the fabrication technology and demonstration of commercial devices. The purpose of this paper is to review the physical properties of III-Nitrides, their areas of application, the current status of the material technology (AlN, AlGaN, GaN, GaInN) including synthesis and processing. The state-of-the-art of III-Nitride material quality, as well as the devices which have been demonstrated, including electronic devices, AlxGa₁-xN ultraviolet photoconductors, ultraviolet photodiodes, visible light emitting diodes (LEDs) and ultraviolet - blue laser diodes, will also be presented.