The bound states and decay time in a certain quantum well structure (GaMnAs/GaAs) were analysed and identified at the minimum decay time. Through the analysis of quantum mathematical equations, we derived specific formulas for energies that significantly amplify the numerical solutions of equations throughout all dimensions of confinement. Without altering the parameters utilized, the quantification, barriers, and well width were predominantly influenced by the spatial dimension parameters, such as the barrier height and well width. The principal bound state and lowest decay time were determined at a well width of 40 Å and a barrier thickness of 46.27 Å. This work revealed a novel characteristic known as interfacial tunnelling, which refers to the phenomenon where an electron establishes a tunnelling state between two interfaces. This tunnelling process is significantly influenced by the characteristics of the materials used, as well as the dimensions of the wells and barriers.
LaBr3:Ce,CeBr3 and GAGG:Ce scintillators were investigated and the determined characteristics were compared with those obtained for the well-known and widely used CsI:Tl and NaI:Tl crystals. All the detectors were of the same size of 10 × 10 × 5 mm3. The aim of this test study was to single out scintillation detectors most suitable for γ-ray spectrometry and γ -ray emission radial profile measurements in high-temperature plasma experiments. Decay time, energy resolution, non-proportionality and full energy peak detection efficiency were measured for γ -ray energies up to 1770 keV. Due to their good energy resolution, short decay time and high detection efficiency for MeV gamma rays, LaBr3:Ce and CeBr3 scintillators are proposed as the best candidates for use especially under conditions of high count rates, which are expected in the forthcoming DT experiments.
W referacie omówiono w jaki sposób zostały zrealizowane w Laboratorium Fotometrii i Radiometrii GUM wymagania norm w części dotyczącej pomiarów parametrów fotometrycznych materiałów fosforescencyjnych. Przedstawione zostaną wymagane przez normy: rodzaje źródeł światła wzbudzenia, wartości natężenia oświetlenia wzbudzenia oraz czasy wzbudzenia. Szczególny nacisk zostanie położony na podstawowy, z punktu widzenia klasyfikowania materiałów fosforescencyjnych, sposób wzbudzania - wzbudzenie lampą ksenonową. Zaprezentowany zostanie układ do wzbudzenia świecenia oraz stanowisko do pomiaru luminancji materiałów fosforescencyjnych. Dalsza część referatu poświęcona będzie podstawowemu parametrowi fotometrycznemu charakteryzującemu materiały fosforescencyjne jakim jest czas zaniku fosforescencji oraz zmianą w podejściu do niego norm przedmiotowych. Końcowa część referatu to podsumowanie doświadczeń z wieloletnich pomiarów i przedstawienie planów budowy nowego stanowiska pomiarowego do pomiaru niskich wartości luminancji.
EN
In this paper we present the way we have realized requirements of standards in part related to measurements of the phosphorescent materials. The kinds of light sources used for excitation, the values of excitation illuminance and times of excitation are discussed. Special attention is paid to excitation with xenon lamp which is admitted to be basic way in classification of the phosphorescent materials. We present the system used for the excitation of lighting and facility for luminance measurements. Basic photometric parameter which characterizes phosphorescent materials i.e. period of light decay, and change in approach to this parameter shown in relevant standards are discussed. The final part of the paper is recapitulation of experience gathered during many years of work and presentation new facility for measuring of low luminance values to be built in the near future in Photometry and Radiometry Lab of Central Office of Measure.
JavaScript jest wyłączony w Twojej przeglądarce internetowej. Włącz go, a następnie odśwież stronę, aby móc w pełni z niej korzystać.