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1

Numerical simulation of UV LED single quantum well based on AlGaN/GaN/AlGaN

Rahou Fatima Zahra

Przegląd Elektrotechniczny

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2024

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R. 100, nr 10

128--131

EN

Optical sources such as light-emitting diodes (LEDs) are good solutions for creating more robust luminaires, with better conversion efficiency and more environmentally friendly. The objective of this work is to study and to simulate ultraviolet light-emitting diode with a single GaN quantum well sandwiched between two layers; respectively p-doped and n-doped AlGaN, using the SILVACO software. This simulation allowed us to extract different characteristics of the LED, such as the current-voltage (I-V) characteristic, the emitted light power, the spontaneous emission rate, radiative recombination, Auger recombination, Shockley-Read-Hall recombination, optical gain, luminous flux, spectral power density, overall efficiency. These simulations allowed us to extract the electrical and optical characteristics of the ultraviolet light-emitting diode with a single quantum well based on p-AlGaN/GaN/n-AlGaN and examine their performance.

PL

Źródła optyczne, takie jak diody elektroluminescencyjne (LED), są dobrym rozwiązaniem do tworzenia bardziej wytrzymałych opraw oświetleniowych o lepszej wydajności konwersji i bardziej przyjaznych dla środowiska. Celem tej pracy jest zbadanie i symulacja diody elektroluminescencyjnej ultrafioletowej z pojedynczą studnią kwantową GaN umieszczoną pomiędzy dwiema warstwami; odpowiednio p-doped i ndoped AlGaN, przy użyciu oprogramowania SILVACO. Ta symulacja pozwoliła nam wyodrębnić różne charakterystyki diody LED, takie jak charakterystyka prądowo-napięciowa (I-V), moc emitowanego światła, szybkość emisji spontanicznej, rekombinacja radiacyjna, rekombinacja Augera, rekombinacja Shockleya-Reada-Halla, wzmocnienie optyczne, strumień świetlny, gęstość widmowa mocy, ogólna wydajność. Te symulacje pozwoliły nam wyodrębnić charakterystyki elektryczne i optyczne diody elektroluminescencyjnej ultrafioletowej z pojedynczą studnią kwantową opartą na p-AlGaN/GaN/n-AlGaN i zbadać ich wydajność.

2

Resonant step-down DC-DC converter based on GaN power integrated circuits and SiC diodes

Stala Robert, Folmer Szymon, Mondzik Andrzej

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2024

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Vol. 72, nr 5

art. no. e151047

EN

In the paper results of the operation and efficiency of a DC-DC resonant converter with a switched capacitor topology, equipped with GaN transistors and SiC diodes are presented. Investigated problems are related to the optimization of the DC-DC power electronic converter in order to achieve miniaturization, a simplified design, and high efficiency. The proposed system operates at a high frequency with low switching losses. The proposed design helps to achieve uniform heating of the transistors and diodes, as demonstrated by the results of the thermal imaging measurements. The GaN transistors are integrated into one package with dedicated gate drivers and used to simplify the circuitry of drivers and increase the power density factor of the proposed device. In the high-frequency design presented in the paper, the converter is implemented without electrolytic capacitors. The results included in the paper contain waveforms recorded in the power circuit at ZVS operation when switching on the transistors. It occurs when the system operates above the frequency of current oscillations in the resonant circuit of the switched capacitor. Efficiency characteristics and a voltage gain curve of the converter versus its output power are presented as well. The results of efficiency and quality of waveforms are important because they facilitate characterizing the tested system for implementation using WBG devices. The use of integrated GaN modules to minimize elements in the physical system is also unique to this model and it allows for very short dead-time use, and operation in ZVS mode at low reverse-conduction losses.

3

Barrier Inhomogeneity of Pt/GaN Junctions with a Low-Temperature ALD Grown ZnO Interlayer

Kim Hogyoung, Won Ye Bin, Choi Byung Joon

Archives of Metallurgy and Materials

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2024

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Vol. 69, iss. 2

459--462

EN

Semiconducting GaN can realize high performance electronic and power devices owing to its high electron mobility and thermal conductivity where good metal-semiconductor contact is prerequisite. In this work, using thermal atomic layer deposition (ALD), ZnO interlayer was grown at 80°C on GaN and the Pt/ZnO/GaN heterojunctions were electrically characterized. The analyses on the current-voltage (I-V) and capacitance (C-V) data showed that the forward I-V conduction was involved with the inhomogeneous Schottky barrier. The higher density of interface states from I-V data than that from C-V data was attributed to nonuniform distribution of interface states. In addition, high density of interface states caused localized high electric field, caused higher Poole Frenkel emission coefficients than the theoretical one.

4

Zastosowanie elektrod grafenowych w przełącznikach na pasmo fal milimetrowych wykonanych w strukturach AlGaN/GaN

Sobolewski Jakub

Przegląd Telekomunikacyjny + Wiadomości Telekomunikacyjne

|

2023

|

nr 4

155--158

PL

W artykule przedstawiono wyniki badań nad możliwością zastosowania elektrod sterujących wykonanych z grafenu w przełącznikach w.cz. na zakres fal milimetrowych. W badaniach wykorzystano struktury testowe przełączników zintegrowanych z linią koplanarną wykonanych w strukturze półprzewodnikowej AlGaN/GaN w topologii szeregowej i bocznikowej. Na podstawie uzyskanych wyników wykazano możliwości wykorzystania zjawiska zmiany przewodności grafenu pod wpływem napięcia do ograniczenia strat w przełączniku. Wskazano także na możliwość uzyskania poprawy izolacji przy wykorzystaniu elektrod grafenowych. Konieczne jest jednak udoskonalenie procesów technologicznych dla uzyskania wysokiej jakości warstw grafenu.

EN

This paper presents research on application of graphene control electrodes for millimeter wave switches. Series and shunt topology switches integrated with coplanar waveguide in AlGaN/GaN semiconductor structure were examined. Presented results show that it is possible to utilize voltage-controlled conductivity of graphene to reduce losses through gate coupling. They also indicate superior performance of shunt topology and show that application of graphene gate can improve switch isolation. However, to achieve good performance, technological processes have to be improved to increase the quality of graphene layers.

5

Zasilacz sterowany cyfrowo z przetwornicą reverse buck

Ptak Przemysław, Górecki Krzysztof, Klewer Dawid

Przegląd Elektrotechniczny

|

2023

|

R. 99, nr 9

285--288

PL

W pracy przedstawiono wyniki pomiarów ilustrujących wpływ doboru tranzystora mocy wykonanego w technologii krzemowej (Si) oraz azotku galu (GaN) na właściwości zasilacza sterowanego cyfrowo z przetwornicą DC-DC typu reverse buck. Przedstawiono i krótko opisano najważniejsze bloki funkcjonalne skonstruowanego układu. Przedyskutowano wybrane zależności wielkości charakteryzujących badany zasilacz od prądu obciążenia.

EN

This paper presents the results of measurements illustrating the effect of selecting a power transistor made in silicon (Si) and gallium nitride (GaN) technology on the properties of a digitally controlled power supply with a reverse buck DC-DC converter. The main functional blocks of the developed system are presented and briefly described. Selected dependencies of quantities characterizing the studied power supply on load current are described.

6

Komputerowa analiza zjawisk pojemnościowych w azotkowych laserach VCSEL

Śpiewak Patrycja, Wasiak Michał, Sarzała Robert P.

Przegląd Elektrotechniczny

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2022

|

R. 98, nr 10

257--260

PL

W pracy przedstawiono symulacje komputerowe azotkowych laserów o emisji powierzchniowej z pionową wnęką rezonansową, emitujących fale 405 nm. Analiza dotyczy zjawisk pojemnościowych zachodzących w tych laserach, istotnych z punktu widzenia ich potencjalnych zastosowań. Zauważono istotną różnicę w prądach czynnych między strukturami ze złączem tunelowym (TJ) i implantacją oraz strukturą z kontaktem ITO. Struktura TJ z grubą implantacją wydaje się najbardziej korzystna z punktu widzenia właściwości pojemnościowych.

EN

This paper presents computer simulations of nitride vertical-cavity surface-emitting lasers, emitting at 405 nm. The analysis is focused on capacitance phenomena occurring in these lasers, which are important for potential applications in optical links. A significant difference in the active currents is observed between the two analyzed structures with tunnel junction (TJ) and implantation, and the structure with an ITO electrode. The structure with TJ and thick implantation seems to be the most favorable from the point of view of capacitance properties.

7

Thermal analysis of a two-dimensional array with surface light emission based on nitride EEL lasers

Dąbrówka Dominika, Sarzała Robert P., Wasiak Michał, Kafar Anna, Perlin Piotr, Saba Kiran

Opto-Electronics Review

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2022

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Vol. 30, No. 4

art. no. e144115

EN

This paper presents the results of a thermal computational analysis of a two-dimensional laser array emitting from a surface. The array consisted of eight equispaced ridge-waveguide edge-emitting nitride diode lasers. Surface emission of light was obtained using mirrors inclined at 45°. The authors investigate how the geometrical dimensions of the array emitters and their pitch in the array affect the increase and distribution of temperature in the device. They also examine the influence on the temperature increase and distribution of the thickness of the insulating SiO₂, the thickness of the gold layer forming the top contact of the laser, and the thickness of the GaN substrate, as well as the influence of the ridge-waveguide width.

8

Study of the side walls inclination angle after RIE process of piezotronic structures

Owczarzak Sławomir, Stafiniak Andrzej, Prażmowska Joanna, Paszkiewicz Regina

Przegląd Elektrotechniczny

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2021

|

R. 97, nr 5

94--98

EN

Control of geometric features of fabricated semiconductors structures such as shape, depth and slope of side walls allows precize control the shape of fabricated piezotronic devices. The electrical response of the piezotronic materials is the most significant when the frequency of the input mechanical signal corresponds to the resonant frequency of the structure. The resonant frequency of the structures is defined by the structures properties and geometry. Therefore, the main aim of piezotronic structures fabrication during reactive ion etching process is receiving the assumed geometrical features. The fabrication of GaN structures with assumed geometric features requires taking into account parameters such as: inclination side walls angle of mask, selectivity of etching [semiconductor: mask], density and width of pattern, and target depth of structures. In this article, the half-empirical equation and the results of research on GaN structures inclination side walls angle evolution in function of pattern width were presented.

PL

Kontrola geometrycznych parametrów wytwarzanych półprzewodnikowych struktur, takich jak: kształt, głębokość i kąt nachylenia ścian bocznych, umożliwia precyzyjną kontrolę kształtu wytwarzanych przyrządów piezotronicznych. Odpowiedź elektryczna materiałów piezotronicznych jest największa, gdy częstotliwość sygnału mechanicznego odpowiada częstotliwości rezonansowej struktury. Częstotliwość rezonansowa struktury zależy od właściwości materiałowych oraz kształtu. Z tego powodu, głównym celem kształtowania struktur piezotronicznych w procesie reaktywnego trawienia jonowego jest otrzymywanie struktur o zadanych wymiarach geometrycznych. Otrzymywanie struktur GaN o zadanej geometrii wymaga uwzględnienia parametrów procesu trawienia, takich jak: kąta nachylenia ścian bocznych maski, selektywność trawienia, gęstość trawionych wzorów, szerokość wzoru oraz docelowa głębokość struktury. W artykule przedstawiono pół-empiryczne równanie i wyniki badań dotyczących wpływu szerokości wzoru na kąt nachylenia ścian bocznych struktur GaN.

9

Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors

Šír Michal, Feňo Ivan

Przegląd Elektrotechniczny

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2021

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R. 97, nr 6

39--43

EN

Novel Gallium Nitride wide bandgap semiconductor devices are capable of improving efficiency of power converters. This article presents a practical optimisation of GaN converter application in the totem-pole power factor conversion converter. As the bottom side cooled devices are used, the article shows integration of switching device and gate driver on a single insulated metal substrate board, attractive for high power density power supply solutions. Measured efficiency data together with analysis of losses distribution and optimization at specific operating conditions are included. Design files of printed circuit board, created in free tool KiCad, used for evaluated prototype are part of this publication.

PL

Nowatorskie urządzenia półprzewodnikowe z azotkiem galu o szerokiej przerwie energetycznej są w stanie poprawić wydajność przekształtników mocy. W artykule przedstawiono praktyczną optymalizację zastosowania konwertera GaN w przekształtniku konwersji współczynnika mocy. Ponieważ stosowane są urządzenia chłodzone od spodu, artykuł przedstawia integrację urządzenia przełączającego i sterownika bramki na pojedynczej izolowanej płycie z metalowym podłożem, co jest atrakcyjne dla rozwiązań zasilających o dużej gęstości mocy. Uwzględniono dane dotyczące zmierzonej sprawności wraz z analizą rozkładu strat i optymalizacją w określonych warunkach pracy.

10

Active Damping in Series Connected Power Modules with Continuous Output Voltage

Ulmer Sabrina, Schullerus Gernot, Sönmez Ertugrul

Power Electronics and Drives

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2021

|

Vol. 6 (41)

314--335

EN

This paper presents a modular and scalable power electronics concept for motor control with continuous output voltage. In contrast to multilevel concepts, modules with continuous output voltage are connected in series. The continuous output voltage of each module is obtained by using gallium nitride (GaN) high electron motility transistor (HEMT)s as switches inside the modules with a switching frequency in the range between 500 kHz and 1 MHz. Due to this high switching frequency a LC filter is integrated into the module resulting in a continuous output voltage. A main topic of the paper is the active damping of this LC output filter for each module and the analysis of the series connection of the damping behaviour. The results are illustrated with simulations and measurements.

11

Design, Analysis and Comparison of Si- and GaN-Based DC-DC Wide-Input-Voltage-Range Buck-Boost Converters

Koszel Mikołaj, Grzejszczak Piotr, Nowatkiewicz Bartosz, Wolski Kornel

International Journal of Electronics and Telecommunications

|

2021

|

Vol. 67, No. 3

337--343

EN

The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range. The research also explains how the implementation of GaN E-HEMT transistors influences the overall efficiency of the converter. The article presents a process of selection of the most efficient topology for stabilization of the battery storage voltage (9 V – 36 V) at the level of 24 V, which enables the usage of ultracapacitor energy storage in a wide range of applications, e.g., in automated electric vehicles. In order to choose the most suitable topology, simulation and laboratory research were conducted. The two most promising topologies were selected for verification in the experimental model. Each of the converters was constructed in two versions: with Si and with GaN E-HEMT transistors. The paper presents experimental research results that consist of precise power loss measurements and thermal analysis. The performance with an increased switching frequency of converters was also examined.

12

Morphology Control of One-Dimensional Gallium Nitride Nanostructures by Modulating the Crystallinity of Sacrificial Gallium Oxide Templates

Ko Yun Taek, Park Mijeong, Park Jingyeong, Moon Jaeyun, Choa Yong-Ho, Lee Young-In

Archives of Metallurgy and Materials

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2021

|

Vol. 66, iss. 3

709--712

EN

In this study, we demonstrated a method of controllably synthesizing one-dimensional nanostructures having a dense or a hollow structure using fibrous sacrificial templates with tunable crystallinity. The fibrous Ga2O3 templates were prepared by calcining the polymer/gallium precursor nanofiber synthesized by an electrospinning process, and their crystallinity was varied by controlling the calcination temperature from 500°C to 900°C. GaN nanostructures were transformed by nitriding the Ga2O3 nanofibers using NH3 gas. All of the transformed GaN nanostructures maintained a one-dimensional structure well and exhibited a diameter of about 50 nm, but their morphology was clearly distinguished according to the crystallinity of the templates. When the templates having a relatively low crystallinity were used, the transformed GaN showed a hollow nanostructure, and as the crystallinity increased, GaN was converted into a denser nanostructure. This morphological difference can be explained as being caused by the difference in the diffusion rate of Ga depending on the crystallinity of Ga2O3 during the conversion from Ga2O3 to GaN. It is expected that this technique will make possible the tubular nanostructure synthesis of nitride functional nanomaterials.

13

Porównanie falowników klasy DE z pasma 13,56 MHz zbudowanych na tranzystorach SiC MOSFET i GaN FET

Przybyła Krzysztof, Kasprzak Marcin

Przegląd Elektrotechniczny

|

2020

|

R. 96, nr 7

68--71

PL

W artykule przedstawiono wyniki pomiarów sprawności czterech falowników o mocy wyjściowej do 450W, dwóch zbudowanych na tranzystorach SiC a dwóch na GaN. Tranzystory mają klasę napięciową (650 – 900)V, prądową (20-30)A, obudowy przewlekane (TO-220, TO-247) i SMD (np. D2PAK-7). Badania wykazały, że tranzystory GaN pozwalają na uzyskanie sprawności całkowitej (89-92)% natomiast tranzystory SiC sprawności (70-80)%. Uzyskane sprawności falowników z tranzystorami GaN są wyższe niż podobnych falowników z najlepszymi Si RF MOSFET.

EN

Efficiency measurement results of the four inverters with output power up to 450W, built with SiC (2x) and GaN (2x) transistors are presented in the paper. Used transistors were in (650-900)V voltage class, (20-30)A current class, (TO-220, TO-247) THT cases and (e.g. D2PAK-7) SMD cases. The research has shown that GaN and SiC transistors allow to obtain total efficiency of (89-92)% and (70-80)% respectively. The obtained efficiency results of the inverters with GaN transistors are higher than similar inverters with the best Si RF MOSFETs.

14

Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

Śpiewak Patrycja, Wasiak Michał, Sarzała Robert P.

Optica Applicata

|

2020

|

Vol. 50, nr 2

301--310

EN

This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing waveanti-node, and positioning of the active area at different anti-nodes are considered.

15

GaN-based soft-switched active power buffer operating at ZCS – problems of start-up and shut-down

Rąbkowski J., Król K., Zdanowski M., Sochacki M.

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2020

|

Vol. 68, nr 4

785--792

EN

This paper describes practical issues related to control of the active power buffer (APB) developed for a 2 kVA single-phase inverter. The buffer is designed using the latest GaN HEMTs controlled with triangular current mode to reduce switching losses, however, the switching frequency should be limited to 1 MHz. In the case of the presented analogue-digital controller, frequency is influenced by a reference current of the APB and circuit. Therefore, the operation at start-up and shut-down is especially challenging. A modified control algorithm that also includes pre-charging and discharging process of the energy buffer is presented and experimentally verified by series of tests of the 2 kVA GaN based inverter with the APB.

16

Wpływ niedokładności wykonania wybranych elementów azotkowego lasera VCSEL na jego charakterystyki emisyjne

Sarzała Robert P., Śpiewak Patrycja

Przegląd Elektrotechniczny

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2019

|

R. 95, nr 9

127--130

PL

W pracy przedstawiono wyniki komputerowego modelowania półprzewodnikowego lasera VCSEL wykonanego z materiałów bazujących na azotku galu. Analiza dotyczy wpływu niedokładności wykonania różnych elementów konstrukcyjnych lasera na emitowaną przez niego moc. Rozważono różne przesunięcia obszaru czynnego i złącza tunelowego w rezonatorze lasera względem położenia pierwotnie zaprojektowanego. Zbadano również wpływ zmian grubości warstw zwierciadeł DBR na osiągi lasera.

EN

This paper presents results of numerical simulations of a semiconductor vertical-cavity surface-emitting laser made of nitride materials. The analysis concerns the impact of the imperfections in fabrication of various laser elements on its emitted power. Different locations of the active area and the tunnel junction in the laser resonator with respect to the originally designed structures were considered. The influence of changes in the thickness of the DBR mirrors layers on the laser performance was also investigated.

17

Application of GaN HEMT as a bidirectional switch in matrix converter

Nowaszewski Krzysztof Cyprian, Sikorski Andrzej

Przegląd Elektrotechniczny

|

2019

|

R. 95, nr 8

160--163

EN

This paper presents a study of the GaN HEMT as a bidirectional switch. The considerations were conducted for the purpose of application of bidirectional switch in a matrix converter. Semi-soft 4-step commutation method was analysed and laboratory tested on the 2-phase to 1-phase converter to verify all the possible commutation processes which occur in a matrix converter. The problem of wrong sign of current detection and output current interruption has also been raised.

PL

Artykuł przedstawia badania GaN HEMT jako łącznika dwukierunkowego. Rozważania były prowadzone w celu zastosowania łącznika dwukierunkowego w przekształtniku matrycowym. Metoda 4-krokowej półmiękkiej komutacji została przeanalizowana i przebadana laboratoryjnie na przekształtniku 2-fazowym na 1-fazowy, który odwzorowuje wszystkie procesy komutacyjne w przekształtniku matrycowym. Został również poruszony problem błędnej detekcji znaku prądu wyjściowego oraz jego przerwania.

18

Optimisation of LT-GaN nucleation layer growth conditions for the improvement of electrical and optical parameters of GaN layers

Wośko Mateusz

Optica Applicata

|

2019

|

Vol. 49, nr 1

167--176

EN

In this work we present the influence of low temperature gallium nitride (LT-GaN) nucleation layer deposition and recrystallization conditions on the electrical and optical properties of buffer and active layer of metal–semiconductor field-effect transistor (MESFET) structure. MESFET structures were used to investigate the properties of bulk materials that determine also the performance of many type GaN based devices, like light emitting diodes (LEDs), high electron mobility transistors (HEMTs) and metal–semiconductor–metal (MSM) detectors. The set of n-GaN/u-GaN/sapphire structures using different nucleation LT-GaN layers thickness and different annealing times was deposited using AIXTRON CCS epitaxial system. In contrast to typical procedure, the high resistive GaN buffer layer was not obtained by intentional Fe/Mg doping, but by specific adjustment of GaN nucleation conditions and recrystallization process parameters that introduce carbon atoms in epitaxial layers, that serve as donors. Generally, low pressure (below 200 mbar) in a reactor chamber, during initial stages of nucleation and recrystallization as well as HT-GaN epitaxy, promotes the growth of high resistive material. Obtained results show that annealing/recrystallization time of LT-GaN has a significant impact on the electrical and optical properties of GaN buffer layers. Longer annealing periods tend to promote crystallization of material with higher electron mobility and higher Si dopant incorporation/activation while maintaining high resistivity in u-GaN buffer area. It was shown that the dimensions of the GaN islands, that could be influenced by the duration of an annealing step of LT-GaN growth, have no impact on the HT-GaN buffer layer coalescence process and material resistivity, but influences mainly electrical properties of active n-GaN layer. Author suggests that the key parameters that are determining the buffer resistivity are the pressure and temperature during LT-GaN annealing and buffer layer coalescence. The influence of GaN island diameters, after LT-GaN annealing, on the u-GaN resistivity was not confirmed.

19

Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Mantarci Asim, Kundakçi Mutlu

Materials Science Poland

|

2019

|

Vol. 37, No. 3

454--464

EN

GaN thin films were deposited on p-Si(1 0 0) substrates using RF magnetron sputtering at various RF powers. Influence of RF power on morphological, optical and structural properties of GaN thin films were investigated and presented in detail. XRD results proved that the films were polycrystalline in structure with (1 0 0) and (1 1 0) planes of hexagonal GaN. It was found that increasing RF power led to deterioration of crystal structure of the films due to increased decomposition of GaN. Stress in GaN thin films was calculated from XRD measurements and the reasons for this stress were discussed. Furthermore, it was analyzed and interpreted whether the experimental measurement results support each other. E2 (high) optical phonon mode of hexagonal GaN was obtained from the analysis of Raman results. UV-Vis spectroscopy results showed that optical band gap of the films varied by changing RF power. The reasons of this variation were discussed. AFM study of the surfaces of the GaN thin films showed that some of them were grown in Stranski-Krastanov mode and others were grown in Frank-Van der Merwe mode. AFM measurements revealed almost homogeneous, nanostructured, low-roughness surface of the GaN thin films. SEM analysis evidenced agglomerations in some regions of surface of the films and their possible causes have been discussed. It has been inferred that morphological, optical, structural properties of GaN thin film can be changed by controlling RF power, making them a potential candidate for LED, solar cell, diode applications.

20

Współczesne tranzystory mocy w impulsowych przekształtnikach napięcia Flyback

Janke W., Bączek M., Kraśniewski J.

Przegląd Elektrotechniczny

|

2018

|

R. 94, nr 9

10--13

PL

W pracy omówiono współczesne tranzystory mocy używane najczęściej w impulsowych przekształtnikach mocy i porównano ich przydatność. Najwięcej uwagi poświęcono tranzystorom HEMT z azotku galu. Zaprezentowano i porównano parametry techniczne różnych odmian tranzystorów dostępnych komercyjnie. Jako przykład zastosowań omawianych tranzystorów pokazano impulsowe przekształtniki Flyback i przedstawiono wybrane charakterystyki tych przekształtników.

EN

Modern power transistors used currently in switch mode power converters are described and compared. The special attention is devoted to HEMT transistors made of gallium nitride (GaN). The representative parameters of commercially available transistors are presented and discussed. The exemplary application of the discussed transistors in switch-mode Flyback converters is presented.