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We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the X-ray irradiation is accompanied by different processes which depend on the density of the dislocations in the original silicon crystals. A usual evolution of the existing structural defects and their radiationstimulated ordering dominate when the concentration remains low enough. Increase in the concentration causes the increasing role of generation of additional radiation defects. Modelling of the underlying physical processes has testified that the near-contact Si layers are strained. They act as getters for the structural defects and impurities.
Content available remote Cooling-stimulated rebuilding process in CdS
Most processes of defect structure rearrangement in semiconductors due to influence of external factors have thermoactivation nature. The others can be related to athermic processes. However, some effects (conductivity layer formation and electron emission from surface) on the basic faces of CdS single crystals were found under cooling process. These effects can not be explain by present theories. Our researches of dependence between the electron emission intensity with (0001)-face CdS crystals and the influence of external factors (external electric field directed along to surface, temperature of previous annealing) enabled to propose a mechanism of process conductive layer formation. It consists in rebuilding as minimum two metastable defects with different activation energies of electron desorption into vacuum.
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