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Opto - Electronics Review

Tytuł artykułu

MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

Autorzy Martyniuk, P.  Koźniewski, A.  Kębłowski, A.  Gawron, W.  Rogalski, A. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
EN The paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N⁺pP⁺n⁺ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ~ 8.7×10¹⁰ cmHz¹/²/W, responsivity ~ 1.72 A/W and time response ~ 145 ps(V = 200 mV).
Słowa kluczowe
EN MWIR   SWIR   HgCdTe heterostructures   HOT detectors  
Wydawca Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Czasopismo Opto - Electronics Review
Rocznik 2014
Tom Vol. 22, No. 2
Strony 118--126
Opis fizyczny Bibliogr. 32 poz., tab., wykr.
autor Martyniuk, P.
  • Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland,
autor Koźniewski, A.
  • Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland
autor Kębłowski, A.
  • Vigo System S.A., 129/133 Poznańska Str., 05-850 Ożarów Mazowiecki, Poland
autor Gawron, W.
  • Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
autor Rogalski, A.
  • Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland
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Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-b56d50fa-0017-4137-8946-a1f2a51a3e67
DOI 10.2478/s11772-014-0186-y