Concept of epitaxial silicon structures for edge illuminated solar cells

• Autorzy: Sarnecki J. , Gawlik G. , Teodorczyk M. , Jeremiasz O. , Kozłowski R. , Lipiński D. , Krzyżak K. , Brzozowski A.
• Języki publikacji: EN

Abstrakty

EN

A new concept of edge illuminated solar cells (EISC) based on silicon epitaxial technique has been proposed. In this kind of photovoltaic (PV) devices, sun-light illuminates directly a p-n junction through the edge of the structure which is perpendicular to junction surface. The main motivation of the presented work is preparation of a working model of an edge-illuminated silicon epitaxial solar cell sufficient to cooperation with a luminescent solar concentrator (LSC) consisted of a polymer foil doped with a luminescent material. The technological processes affecting the cell I–V characteristic and PV parameters are considered.

Słowa kluczowe

EN

silicon epitaxy; solar cell; edge illuminated; silicon solar cell

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2011
• Tom: Vol. 19, No. 4
• Strony: 486--490
• Opis fizyczny: Bibliogr. 10 poz.

Twórcy

autor

Sarnecki J.

autor

Gawlik G.

autor

Teodorczyk M.

autor

Jeremiasz O.

autor

Kozłowski R.

autor

Lipiński D.

autor

Krzyżak K.

autor

Brzozowski A.

• Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland,

Bibliografia

• [1] N. H. Rafat, “A simple analytical treatment of edge-illuminated VMJ silicon solar cells”, Sol. Energy 80, 1588-1599 (2006).
• [2] P. Stella and A. Gover, “Vertical multi-junctions solar cell”, in Proc. the 9th IEEE Photovoltaic Specialists Conf., 85-86 (1972).
• [3] B. L. Sater, H. W. Brandhorst, T. J. Riley, and R. E. Hart, “The multiple junction edge illuminated solar cell”, in Proc. the 10th IEEE Photovoltaic Specialists Conf., 188-193 (1973).
• [4] B. L. Sater and C. Goradia, “The high intensity solar cell-key to low cost photovoltaic power”, in Proc. the 11th IEEE Photovoltaic Specialists Conf., 356-363 (1975).
• [5] C. Hu, J. K. Carney, and R. I. Frank, “New analysis of a high-voltage vertical multijunction solar cell”, J. Appl. Phys. 48, 442-444 (1977).
• [6] C. Goradia and B. L. Sater, “A first order theory of the p+-n-n+ edge-illuminated silicon solar cell at very high injection levels”, IEEE T. Electron Dev. ED-24, 342-351 (1977).
• [7] R. J. Soukup, “The lensed high-voltage vertical multijunction solar cell”, J. Appl. Phys. 48, 440-441 (1977).
• [8] B. L. Sater and N. D. Sater, “High voltage silicon VMJ solar cells for up to 1000 suns intensities”, in Proc. the 29th IEEE Photovoltaic Specialists Conf., 1019-1022 (2002).
• [9] B. C. Rowan, L. R. Wilson, and B. S. Richards, “Advanced material concepts for luminescent solar concentrators”, IEEE J. Sel. Top. Quant. 14, 1312 (2008).
• [10] O. Jeremiasz, M. Socha, W. Nikiel, L. Lipińska, J. Sarnecki, M. Nakielska, G. Gawlik, M. Teodorczyk, and A. Wnuk, “Nanocrystals doped polymer material for luminescent solar concentrator for absorption of visible and NIR part of solar spectrum and emission within Si absorption range”, Proc. the 25th EU PVSEC, 587-590 (2010).