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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BWAD-0022-0021

Czasopismo

Opto - Electronics Review

Tytuł artykułu

Type-II InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures

Autorzy Razeghi, M.  Abdollahi Pour, S.  Huang, E. K.  Chen, G.  Haddadi, A.  Nguyen, B. M. 
Treść / Zawartość http://www.wat.edu.pl/review/optor/contents.htm
Warianty tytułu
Języki publikacji EN
Abstrakty
EN Recent efforts to improve the performance of type II InAs/GaSb superlattice photodiodes and focal plane arrays (FPA) have been reviewed. The theoretical bandstructure models have been discussed first. A review of recent developments in growth and characterization techniques is given. The efforts to improve the performance of MWIR photodiodes and focal plane arrays (FPAs) have been reviewed and the latest results have been reported. It is shown that these improvements has resulted in background limited performance (BLIP) of single element photodiodes up to 180 K. FPA shows a constant noise equivalent temperature difference (NEDT) of 11 mK up to 120 K and it shows human body imaging up to 170 K.
Słowa kluczowe
EN type II superlattice   InAs/GaSb   m-structure   photodetectors   MWIR   focal plane arrays  
Wydawca Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Czasopismo Opto - Electronics Review
Rocznik 2011
Tom Vol. 19, No. 3
Strony 261--269
Opis fizyczny Bibliogr. 13 poz., il., wykr.
Twórcy
autor Razeghi, M.
autor Abdollahi Pour, S.
autor Huang, E. K.
autor Chen, G.
autor Haddadi, A.
autor Nguyen, B. M.
  • Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA, razeghi@eecs.northwestern.edu
Bibliografia
[1] G.A. Sai-Halasz, R. Tsu, and L. Esaki, “A new semiconductor superlattice”, Appl. Phys. Lett. 30, 651-653 (1977).
[2] M. Razeghi, US Patent 6864552, “Focal plane arrays in type-II superlattices”, 2005.
[3] H. Mohseni, V.I. Litvinov, and M. Razeghi, “Interface-in-duced suppression of the Auger recombination in type-II InAs/GaSb superlattices”, Phys. Rev. B58, 15378 (1998).
[4] B.M. Nguyen, M. Razeghi, V. Nathan, and G.J. Brown, “Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes”, Proc. SPIE 6479, 6490S (2007).
[5] Y. Wei and M. Razeghi, “Modelling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering”, Phys. Rev. B69, 085316-7 (2004).
[6] A. Hood, D. Hoffman, Y. Wei, F. Fuchs, and M. Razeghi, “Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes”, Appl. Phys. Lett. 88, 052112-3 (2006).
[7] F. Fuchs, D. Hoffmann, A. Gin, A. Hood, Y. Wei, and M. Razeghi, “Negative luminescence of InAs/GaSb superlattice photodiodes”, Phys. Status Solidi (c) 3, 444-447 (2006).
[8] D. Hoffman, A. Hood, E. Michel, F. Fuchs, and M. Razeghi, “Electroluminescence of InAs-GaSb heterodiodes”, IEEE J. Quantum Elect. 42, 126-130 (2006).
[9] A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel, and M. Razeghi, “High differential resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared”, Appl. Phys. Lett. 89, 093506-3 (2006).
[10] D. Hoffman, B.M. Nguyen, P.Y. Delaunay, A. Hood, M. Razeghi, and J. Pellegrino, “Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes”, Appl. Phys. Lett. 91, 143507-3 (2007).
[11] B.M. Nguyen, D. Hoffman, P.Y. Delaunay, and M. Razeghi, “Dark current suppression in type II InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier”, Appl. Phys. Lett. 91, 163511-3 (2007).
[12] Y. Wei and M. Razeghi, “Modelling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering”, Phys. Rev. B69, 085316 (2004).
[13] B.M. Nguyen, D. Hoffman, P.Y. Delaunay, M. Razeghi, and V. Nathan, “Polarity inversion of type II InAs/GaSb superlattice photodiodes”, Appl. Phys. Lett. 91, 103503-3 (2007).
Kolekcja BazTech
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