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Properties comparison of GaN epilayers deposited under different growth temperatures

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Języki publikacji
EN
Abstrakty
EN
Undoped GaN epilayers were grown on c-plane sapphire substrates under different growth temperatures by metalorganic chemical vapour deposition (MOCVD). The optical and structural characteristics of these grown samples were studied and compared. It was found that the crystalline quality of GaN film deposited at 1050°C was better that of other samples. Photoluminescence spectra showed that the intensities of yellow luminescence band of the samples decreased as the growth temperature increased. All above test results demonstrate that high temperature deposition can serve as a good method for high-quality GaN epilayer growth and there exists an optimal growth temperature.
Twórcy
autor
autor
autor
autor
autor
  • School of Mechanical Engineering, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074 Wuhan, China
Bibliografia
  • [1] S. J. Pearton, J. C. Zopler, R. J. Shul, and F. Ren: GaN: Processing, defects, and devices. J. Appl. Phys. 86, 1-78, 1999.
  • [2] J. Ohta, H. Fujioka, M. Oshima, K. Fujiwara, and A. Ishii: Experimental and theoretical investigation on the structural properties of GaN grown on sapphire. Appl. Phys. Lett. 83, 3075-3077, 2003.
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  • [4] M. H. Kim, M. Oshima, H. Kinoshita, Y. Shirakura, K. Miyamura, J. Ohta, A. Kobayashi, and H. Fujioka: Investigation of the initial stage of GaN epitaxial growth on 6H-SiC (0001) at room temperature. Appl. Phys. Lett. 89, 031916, 2006.
  • [5] R. F. Davis, S. M. Bishop, S. Mita, R. Collazo, Z. J. Reitmeier, and Z. Sitar: Epitaxial growth of gallium nitride. AIP Conf. Proc. 916, 520-540, 2007.
  • [6] T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura: Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial over-growth. Appl. Phys. Lett. 84, 3768-3770, 2004.
  • [7] V. M. Kaganer, O. Brandt, A. Trampert, and K. H. Ploog: X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films. Phys. Rev. B72, 045423, 2005.
  • [8] H. Heinke, V. Kirchner, S. Einfeldt, and D. Hommel: X-ray diffraction analysis of the defect structure in epitaxial GaN. Appl. Phys. Lett. 77, 2145-2147, 2000.
  • [9] I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, Y. Shapira, U. Tisch, and J. Salzman: Yellow luminescence and related deep levels in unintentionally doped GaN films. Phys. Rev. B59, 9748-9751, 1999.
  • [10] J. Kang and T. Ogawa: Yellow luminescence from precipitates in GaN epilayers. Appl. Phys. A69, 631-635, 1999.
  • [11] M. A. Reshchikov, J. Jasinski, Z. Liliental-Weber, D. Huang, L. He, P. Visconti, and H. Morkoç: Photoluminescence from structural defects in GaN. Physica B, 340/342, 440-443, 2003.
  • [12] M. A. Reshchikov and H. Morkoç: Luminescence from defects in GaN. Physica B, 376/377, 428-431, 2006.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BWAD-0020-0004
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