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The reduction of the dark current without reducing the photocurrent is a considerable challenge is developing far-infrared (FIR)/terahertz detectors. Since quantum dot (QD) based detectors inherently show low dark current, a QD-based structure is an appropriate choice for terahertz detectors. The work reported here discusses multi-band tunnelling quantum dot infrared photo detector (T-QDIP) structures designed for high temperature operation covering the range from mid- to far-infrared. These structures grown by molecular beam epitaxy consist of a QD (InGaAs or InAlAs) placed in a well (GaAs/AlGaAs) with a double-barrier system (AlGaAs/InGaAs/AlGaAs) adjacent to it. The photocurrent, which can be selectively collected by resonant tunnelling, is generated by a transition of carriers from the ground state in the QD to a state in the well coupled with a state in the double-barrier system. The double-barrier system blocks the majority of carriers contributing to the dark current. Several important properties of T-QDIP detectors such as the multi-colour (multi-band) nature of the photoresponse, the selectivity of the operating wavelength by the applied bias, and the polarization sensitivity of the response peaks, are also discussed.
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Tom
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223--228
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Bibliogr. 16 poz., tab., wykr.
Twórcy
autor
autor
autor
autor
autor
autor
autor
- Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA, uperera@gsu.edu
Bibliografia
- 1. E.E. Haller, "Advanced far-infrared detectors", Infrared Phys. 35, 127-146 (1994).
- 2. M. Suzuki and M. Tonouchi, "Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56 µm femtosecond optical pulses", Appl. Phys. Lett. 86,163504-3 (2005).
- 3. H.C. Liu, C.Y. Song, AJ. Spring Thorpe, and J.C. Cao, "Terahertz quantum-well photo detector", Appl. Phys. Lett. 84, 4068 (2004).
- 4. M.B.M. Rinzan, A.G.U. Perera, S.G. Matsik, H.C. Liu, Z.R. Wasilewski, and M. Buchanan, "AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold", Appl. Phys. Lett. 86, 071112 (2005).
- 5. P. Bhattacharya, X.H. Su, S. Chakrabarti, G. Ariyawansa, and A.G.U. Perera, "Characteristics of a tunnelling quantum-dot infrared photo detector operating at room temperature", Appl. Phys. Lett. 86, 191106 (2005).
- 6. X.H. Su, J. Yang, P. Bhattacharya, G. Ariyawansa, and A.G.U. Perera, "Terahertz detection with tunnelling quantum dot intersublevel photodetector", Appl. Phys. Lett. 89, 031117(2006).
- 7. A. Goldberg, P.N. Uppal, and M. Winn, "Detection of buried land mines using a dual-band LWIR/LWIR QWIP focal plane array", Infrared Physics & Technology 44, 427 (2003).
- 8. H. Jiang and J. Singh, "Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study", Phys. Rev. B56, 4696 (1998).
- 9. R.M. Martin, "Elastic properties of ZnS structure semiconductors", Phys. Rev. Bl, 4005 (1969).
- 10. P.N. Keating, "Effect of invariance requirements on the elastic strain energy of crystals with application to the diamond structure", Phys. Rev. 145, 637 (1966).
- 11. E. Anemogiannis, N. Glytsis, and T.K. Gaylord, "Quasi-bound states determination using a perturbed wavenumbers method in a large quantum box", IEEE. J. Quant. Electron. 33, 742 (1997).
- 12. S. Krishna, G. von Winckel, S. Raghavan, A. Stintz, G. Ariyawansa, S.G. Matsik, and A.G.U. Perera, "Three-colour (λ p1 ~3.8 µm, λ p2 ~8.5 µm, and λ p3 ~23.2 µm) InAs/InGaAs quantum dots in a well detectors", Appl. Phys. Lett. 83, 2745 (2003).
- 13. J. Urayama, T.B. Norris, J. Singh, and P. Bhattacharya, "Observation of phonon bottleneck in quantum dot electronic relaxation", Phys. Rev. Lett. 86, 4930 (2001).
- 14. M. Larive, L. Collot, S. Breugnot, H. Botma, and P. Roos, "Laid and flush-buried mines detection using 8-12 µm polarimetric imager", Proc. SPIE 3392, 115 (1998).
- 15. B.A. Barbour, M.W. Jones, H.B. Barnes, and C.P. Lewis, "Passive IR polarization sensors: a new technology for mine detection", Proc. SPIE 3392, 96 (1998).
- 16. B. Asian, H.C. Liu, J.A. Gupta, Z.R. Wasiewski, G.C. Aers, S. Raymond, and M. Buchanan, "Observation of resonant tunnelling through a self-assembled InAs quantum dot layer", Appl. Phys. Lett. 88, 043103 (2006).
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