Numerical analysis of three-colour HgCdTe detectors

• Autorzy: Jóźwikowski K. , Rogalski A.
• Języki publikacji: EN

Abstrakty

EN

The performance of three-colour HgCdTe photovoltaic heterostructure detector is examined theoretically. In comparison with two-colour detectors with two back-to-back junctions, three-colour structure contains an absorber of intermediate wavelength placed between two junctions and electronic barriers are used to isolate this intermediate region. This structure was first proposed by British workers. Three-detector structures with different localizations of separating barriers are analyzed. The calculation results are presented in the form of spatial distributions of bandgap energy and quantum efficiency. Enhanced original computer programs are applied to solve the system of non-linear continuity equations for carriers and Poisson equations. In addition, the numerical analysis includes the dependence of absorption coefficient on Burstein effect as well as interference effects in heterostructure with metallic electrical contacts. It is shown that the performance of the detector is critically dependent on the barrier's doping level and position in relation to the junction. This behaviour is serious disadvantage of the considered three-colour detector. A small shift of the barier location and doping level causes serious changes in spectral responsivity.

Słowa kluczowe

EN

three-colour HgCdTe detectors; bandgap diagrams; spectral responses; numerical analysis

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2007
• Tom: Vol. 15, No. 4
• Strony: 215--222
• Opis fizyczny: Bibliogr. 36 poz., wykr.

Twórcy

autor

Jóźwikowski K.

autor

Rogalski A.

• Institute of Applied Physics, Military University of Technology, 2 Kaliskiego Str., 00-908 Warsaw, Poland

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