Problems with creaking of Alx Ga 1-x N layers

• Autorzy: Dumiszewska E. , Lenkiewicz D. , Strupinski W. , Jasik A. , Jakiela R. S. , Wesolowski M.
• Języki publikacji: EN

Abstrakty

EN

Alx Ga 1-x N a wide band-gap material, which can be used for manufacture of UV detectors. Unfortunately, there are problems with the cracing of those layers occurring above some critical thickness, which is a bit smalle from the one used for detectors (about 1 um). Our investigation concentrated on the causes of crack formation. to avoig it we used so-called special AIN nucleation layer, which was to stop the relaxation. We obtained a strained layer free of cracking, but with a very big number of dislocations. We compared dislocation densities of strained and relaxed Al 0.4 Ga 0.6 N layers. The first one was chracterized by a higher dilocation density than the second one. We also inyestigated the problem with cracking occurring in Al 0.4 Ga 0.6 N epitaxial layers during the doping, and how to control this process. The relaxation of the layers started for very low impurity densities and went on when we increased the amount of the dopant.

Słowa kluczowe

EN

Al<sub>0.4; Ga<sub>0.6 N; Si doping

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2005
• Tom: Vol. 35, nr 1
• Strony: 111--115
• Opis fizyczny: Bibliogr. 6 poz.

Twórcy

autor

Dumiszewska E.

• Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warszawa, Poland
• Warsaw University of Technology, Plac Politechniki 1, 00-661 Warszawa, Poland

autor

Lenkiewicz D.

• Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warszawa, Poland
• Warsaw University of Technology, Plac Politechniki 1, 00-661 Warszawa, Poland

autor

Strupinski W.

• Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warszawa, Poland

autor

Jasik A.

• Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warszawa, Poland
• Warsaw University of Technology, Plac Politechniki 1, 00-661 Warszawa, Poland

autor

Jakiela R. S.

• Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warszawa, Poland
• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

autor

Wesolowski M.

• Institute of Electronic Materials Technology, ul. Wólczynska 133, 01-919 Warszawa, Poland

• Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa, Poland

Bibliografia

• [1] NAKAMURA S., FASOL G., The Blue Laser Diode, Springer, Berlin 1997, p. 277.
• [2] JUNG HAN, CRAWFORD M.H., SHUL R.J., HEARNE S.J., CHASON E., FIGIEL J.J., BANAS M., Monitoring and controlling of strain during MOCVD of AlGaN for UV optoelectronics, MRS Internet Journal of Nitride Semiconductor Research 4S1, 1999, G7.7.
• [3] JIANQUIN QU, JING LI, GUOYI ZHANG, PII: S0038-1098(98)00253-1.
• [4] CANTU P., WU F., WALTEREIT P., KELLER S., ROMANOV A.E., MISHRA U.K., DENBAARS S.P., SPECK J.S., Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films, Applied Physics Letters 83(4), 2003, pp. 674–676.
• [5] AMANO H., AKASAKI I., Critical issues in AlGa1–xN growth, Optical Materials 19(1), 2002, pp. 219–22.
• [6] WEYHER J.L., TICHELAAR F.D., ZANDBERGEN H.W., MACHT L., HAGEMAN P-R., Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN, Journal of Applied Physics 90(12), 2001, pp. 6105–9.