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Opto - Electronics Review

Tytuł artykułu

Quantitative study of solar cells based on Cu-In-S based absorber layers grown by the CISCuT - process

Autorzy Degrave, S.  Burgelman, M.  Nollet, P. 
Treść / Zawartość
Warianty tytułu
Konferencja The E-MRS European Conference on Photovoltaics ; ( 25.10-27.10.1999)
Języki publikacji EN
EN CISCut [CuInS2(CIS) on Cu tape ] is a new fabrication technology for chalcogenide absorber layers for solar cells. In a roll-to-roll process, indium is electrochemically deposided on a copper tape, and subsequently sulphurised. It has been shown that various Cu-In-S phases are formed, depending on fabrication parameters. After completion with a Cu(O,S) window layer, the structure behaves as a photovoiltaic p-n junction, the copper substrate being the n-side and the Cu(O,S) layer being the p-side. In this paper, evidence is given that the electronic p-n junctions is located inside the CIS layer, and not at the Cu(O,S) interface. Solar cells were prepared with a small area dot contact of Cu(O,S) of varying size and their I-V curves were analysed. Uniformly illuminated cells show too large a light current, and a low fill factor, due to pronunced shunt. The measured phenomena were explained quantitatively by phenomenological model, which asssumes that there is an internal p-n junction inside the absorber layer, and that this p-layer near the surface has a non-negligible lateral conductance. Fitting of measured and simulated I-V curves, as a function of the dot size, allowed estimating the sheet resistance of the p-type layer.
Słowa kluczowe
EN solar cells   thin film   CIS   CISCuT  
Wydawca Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Czasopismo Opto - Electronics Review
Rocznik 2000
Tom Vol. 8, No. 4
Strony 295--298
Opis fizyczny Bibliogr. 3 poz.
autor Degrave, S.
autor Burgelman, M.
autor Nollet, P.
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-article-BWA1-0001-1003