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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BWA0-0051-0060

Czasopismo

Opto - Electronics Review

Tytuł artykułu

Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

Autorzy Piskorski, K.  Przewlocki, H. M.  Esteve, R.  Bakowski, M. 
Treść / Zawartość http://www.wat.edu.pl/review/optor/contents.htm
Warianty tytułu
Języki publikacji EN
Abstrakty
EN MOS capacitors were fabricated on 3C-SiC n-type substrate (001) with a 10-µm N-type epitaxial layer. An SiO2layer of the thickness tox≈ 55 nm was deposited by PECVD. Circular Al, Ni, and Au gate contacts 0.7 mm in diameter were formed by ion beam sputtering and lift-off. Energy band diagrams of the MOS capacitors were determined using the photoelectric, electric, and optical measurement methods. Optical method (ellipsometry) was used to determine the gate and dielectric layer thicknesses and their optical indices: the refraction n and the extinction k coefficients. Electrical method of C = ƒ (VG) characteristic measurements allowed to determine the doping density ND and the flat band voltage VFB in the semiconductor. Most of the parameters which were necessary for the construction of the band diagrams and for determination of the basic physical properties of the structures (e.g. the effective contact potential difference ΦMS) were measured by several photoelectric methods and calculated using the measurement data. As a result, complete energy band diagrams have been determined for MOS capacitors with three different gate materials and they are demonstrated for two different gate voltages VG: for the flat-band in the semiconductor (VG= VFB) and for the flat-band in the dielectric (VG= VG0).
Słowa kluczowe
EN MOS structure   band diagram   photoelectric measurements  
Wydawca Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Czasopismo Opto - Electronics Review
Rocznik 2012
Tom Vol. 20, No. 1
Strony 67--74
Opis fizyczny Bibliogr. 29 poz., wykr.
Twórcy
autor Piskorski, K.
autor Przewlocki, H. M.
autor Esteve, R.
autor Bakowski, M.
  • Institute of Electron Technology, Department of Characterisation of Nanoelectronic Structures, 32/46 Lotników Ave., 02-668 Warsaw, Poland, kpisk@ite.waw.pl
Bibliografia
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