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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BPW7-0007-0112

Czasopismo

Optica Applicata

Tytuł artykułu

Designing of GaAs/AlGaAs multiple quantum wells to enhance magnetooptical Kerr effect

Autorzy Bozym, J.  Dudziak, E.  Pruchnik, D.  Herezo, K.  Wasilewski, Z. R. 
Treść / Zawartość http://opticaapplicata.pwr.edu.pl/archive.php
Warianty tytułu
Języki publikacji EN
Abstrakty
EN In this article we study magnetooptical Kerr effect (MOKE) of the GaAs/Al0.31Ga0.69As multiple quantum wells (MQWs). Firstly, comparing the measured spectra of MOKE with the theoretical ones we established parameters of the sample such as energy of excitons in quantum wells, their oscillation strengths, damping coefficients. Then using the obtained parameters we tried to establish which quantum well from the 30 quantum wells existing in the sample is the most responsible for the value of rotation of polarization plane of light in measured MOKE. Finally we analysed how the geometry of the structure influences the value of the rotation. We changed the widths of all barriers between the wells of MWQs while the other parameters remained unchanged. It occurred that the rotation of polarization plane changed periodically. A big enhancement of MOKE can be obtained for certain widths of barriers. It confirms that the interference plays a crucial role in the MOKE.
Słowa kluczowe
EN magnetooptical Kerr effect (MOKE)   GaAs/AlGaAs MQWs   interference  
Wydawca Oficyna Wydawnicza Politechniki Wrocławskiej
Czasopismo Optica Applicata
Rocznik 2007
Tom Vol. 37, nr 1-2
Strony 107--115
Opis fizyczny Bibliogr. 14 poz.,
Twórcy
autor Bozym, J.
autor Dudziak, E.
autor Pruchnik, D.
autor Herezo, K.
autor Wasilewski, Z. R.
  • Wroclaw University of Technology, Wub. Wyspianskiego 27, 50-370 Wroclaw, Poland
Bibliografia
[1] Bożym J., Dudziak E., Pruchnik D., Wasilewski Z.R., Optical Properties of Semiconductor Nanostructures, [Eds.] M.L. Sadowski et al., Kluwer Academic Publishers, Netherlands 2000, pp. 65-70.
[2] Chen Z., Bratschitsch R., Cundiff S.T., Interference effects in transient Kerr spectra of a semiconductor multilayer structure. Optics Letters 30(17), 2005, pp. 2320-2.
[3] Qiu Z.Q., Bader S.D., Surface magneto-optic Kerr effect, Review of Scientific Instruments 71(3), 2000, pp. 1243-55.
[4] Suits J.C., Magneto-optical rotation and ellipticity measurements with a spinning analyzer, The Review of Scientific Instruments 42(1), 1971, pp. 19-22.
[5] Hass G., Physics of Thin Films, Vol. I, Academic Press, New York, London 1963.
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[8] Testelin C, Rigaux C., Cibert J., Resonant magneto-optic Kerr effect in CdTe/Cdl_xMnxTe quantum-well structures, Physical Review B 55(4), 1997, pp. 2360-7.
[9] Sell D.D., Casey H.C. Jr, Wecht K.W., Concentration dependence of the refractive index for n- andp-type GaAs between 1.2 and 1.8 eV, Journal of Applied Physics 45(6), 1974, pp. 2650-7.
[10] Sturge M.D., Optical absorption of gallium arsenide between 0.6 and 2.75 eV, Physical Review 127(3), 1962, pp. 768-73.
[11] Sell D.D., Casey H.C. Jr, Optical absorption and photoluminescence studies of thin GaAs layers in GaAsAlfiOj^s double heterostructures, Journal of Applied Physics 45(2), 1974, pp. 800-7.
[12] Fern R.E., Onton A., Refractive index of AlAs, Journal of Applied Physics 42(9), 1971, pp. 3499-500.
[13] Casey H.C. Jr, Sell D.D., Panish M.B., Refractive index of AlxGai_xAs between 1.2 and 1.8 eV, Applied Physics Letters 24(2), 1974, pp. 63-5.
[14] Blakemore J.S., Semiconducting and other major properties of gallium arsenide, Journal of Applied Physics 53(10), 1982, pp. Rl 23-81.
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