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Warianty tytułu
Konferencja
Conference New Materials for Magnetoelectronics, Będlewo, 3-6 May 2006
Języki publikacji
Abstrakty
Simple magnetoresistive nanodevices formed by narrow constrictions of submicron width in the epitaxial film of a ferromagnetic (Ga,Mn)As semiconductor have been fabricated employing the electronbeam- lithography patterning and low-energy low-dose oxygen ion implantation. Low-temperature chargecarrier transport through the constrictions has been investigated and correlated with magnetic properties of the film. The constricted devices revealed abrupt jumps of a reduced resistance that appeared when the sweeping magnetic field crossed the regions of the coercive field of the film magnetization. In contrast, the non-constricted reference device displayed abrupt jumps of an enhanced resistance at the same values of magnetic field. We interpret the both features, whose positions on the magnetic-field scale reflect the hysteresis loop of magnetization, as manifestation of domain wall contribution to the (Ga,Mn)As film resistance. Presumably, the suppression of the weak localization effects by a domain wall located at the constriction results in a negative contribution of a domain wall to the resistance, while the spin-orbit interaction can be responsible for its positive contribution to the resistance.
Słowa kluczowe
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Czasopismo
Rocznik
Tom
Strony
351--358
Opis fizyczny
Bibliogr. 24 poz.
Twórcy
autor
autor
autor
autor
autor
autor
autor
autor
autor
- Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
Bibliografia
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- [4] KU K.C., POTASHNIK S.J., WANG R.F., SEONG M.J., JOHNSTON-HALPERIN E., MEYERS R.C., CHUN S.H., MASCARENHAS A., GOSSARD A.C., AWSCHALOM D.D., SCHIFFER P., SAMARTH N., Appl. Phys. Lett., 82 (2003), 2302.
- [5] EDMONDS K.W., BOGUSŁAWSKI P., WANG K.Y., CAMPION R.P., NOVIKOV S.V., FARLEY N.R.S., GALLAGHER B.L., FOXON C.T., SAWICKI M., DIETL T., BUONGIORNO NARDELLI M., BERNHOLC J., Phys. Rev. Lett., 92 (2004), 037201.
- [6] ADELL M., ILVER L., KANSKI J., STANCIU V., SVEDLINDH P., SADOWSKI J., DOMAGALA J. Z., TERKI F., HERNANDEZ C., CHARAR S., Appl. Phys. Lett., 86 (2005), 112501.
- [7] JUNGWIRTH T., WANG K.Y., MAŠEK J., EDMONDS K.W., KÖNIG J., SINOVA J., POLINI M., GONCHARUK N.A., MACDONALD A.H., SAWICKI M., RUSHFORTH A.W., CAMPION R.P., ZHAO L.X., FOXON C.T., GALLAGHER B.L., Phys. Rev. B, 72 (2005), 165204.
- [8] SADOWSKI J., DOMAGAŁA J.Z., Phys. Rev. B, 69 (2004), 075206.
- [9] FIGIELSKI T., WOSIŃSKI T., MORAWSKI A., PELYA O., SADOWSKI J., TÓTH A.L., JAGIELSKI J., Phys. Stat. Sol. (a), 195 (2003), 228.
- [10] FIGIELSKI T., WOSIŃSKI T., PELYA O., SADOWSKI J., MORAWSKI A., MĄKOSA A., DOBROWOLSKI W., JAGIELSKI J., WRÓBEL J., Acta Phys. Pol. A, 103 (2003), 525.
- [11] FIGIELSKI T., WOSIŃSKI T., PELYA O., SADOWSKI J., MORAWSKI A., MĄKOSA A., DOBROWOLSKI W., SZYMCZAK R., WRÓBEL J., [in:] Physics, Chemistry and Applications of Nanostructures, V.E. Borisenko, S.V. Gaponenko, V.S. Gurin (Eds.), World Scientific, Singapore, 2005, pp. 289–292.
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- [21] DIETL T., KÖNIG J., MACDONALD A.H., Phys. Rev. B 64 (2001), 241201(R).
- [22] POTASHNIK S.J., KU K.C., MAHENDIRAN R., CHUN S.H., WANG R.F., SAMARTH N., SCHIFFER P., Phys. Rev. B, 66 (2002), 012408.
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BPW7-0007-0033