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Materials Science Poland

Tytuł artykułu

Persistent photoconductivity in a InP:Fe single layer structure at room temperature

Autorzy Zardas, G. E.  Yannakopoulos, P. H.  Symeonides, C. I.  Csabay, O.  Euthymiou, P. C. 
Treść / Zawartość
Warianty tytułu
Konferencja Workshop on Functional Materials FMA 2004, Athens, Greece, 23-26 September 2005
Języki publikacji EN
EN Measurements of current in the dark and under illumination were carried out at room temperature on samples of semi-insulating (SI) InP:Fe, on which a layer of low resistivity InP:Fe was deposited. A voltage of 25 mV was applied. After the illumination was switched off, a remaining current was observed, for at least one hour, higher than the current before the illumination. This phenomenon is known as persistent photoconductivity (PPC) and, according to the suggested models, is due to the barriers separating electrons and holes and preventing their recombination.
Słowa kluczowe
EN semiconductor   photoconductivity   recombination and trapping   photoelectron spectroscopy  
Wydawca Springer
Czasopismo Materials Science Poland
Rocznik 2005
Tom Vol. 23, No. 4
Strony 985--988
Opis fizyczny Bibliogr. 5 poz., rys., tab.
autor Zardas, G. E.
autor Yannakopoulos, P. H.
autor Symeonides, C. I.
autor Csabay, O.
autor Euthymiou, P. C.
  • University of Athens, Physics Department, Solid State Section, Athens, Greece,
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Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-article-BPW1-0022-0017