Narzędzia help

Preferencje help
Widoczny [Schowaj] Abstrakt
Liczba wyników
first previous next last
cannonical link button


Journal of Achievements in Materials and Manufacturing Engineering

Tytuł artykułu

Electrical resistivity of copper oxide thin films prepared by reactive magnetron sputtering

Autorzy Ogwu, A. A.  Darma, T. H.  Bouquerel, E. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
EN Purpose: Investigation the effect of varying r.f. power and oxygen flow rates during deposition on the electrical properties of copper oxide thin films prepared by reactive magnetron sputtering. Design/methodology/approach: The films were characterised by AFM, XPS, four point electrical resistivity probe measurements and spectrophotometry. Findings: The electrical sheet resistance of the films was found to vary from greater than 4 x 105 ohms/square for films prepared at 200W r.f. power to as low as 20 ohms/square for films prepared at 800W r.f. power. The variation in the electrical resistivity of the films with deposition conditions has been explained in terms of stoichiometric changes induced by copper or oxygen ion vacancies and neutral defects. Practical implications: The formation of these defects depends on the sticking coefficient, nucleation rates and the migration of impinging copper and oxygen species on the substrate during deposition. Originality/value: This information is expected to underlie the successful development of copper oxide films for solar windows and other semi-conductor applications including gas sensors.
Słowa kluczowe
PL właściwości elektryczne   rozpylanie magnetronowe   warstwy cienkie  
EN electrical properties   magnetron sputtering   thin films  
Wydawca International OCSCO World Press
Czasopismo Journal of Achievements in Materials and Manufacturing Engineering
Rocznik 2007
Tom Vol. 24, nr 1
Strony 172--177
Opis fizyczny Bibliogr. 22 poz., rys., tab.
autor Ogwu, A. A.
autor Darma, T. H.
autor Bouquerel, E.
  • Thin film centre, School of Engineering and Science, Paisley University, High street, Paisley PA1 2BE, Scotland, United Kingdom,
[1] R. Padyath, J. Seth, S.V. Babu, Deposition of copper oxide films by reactive laser ablation of copper formate in an r.f. oxygen plasma ambient, Thin solid Films 239 (1994) 8-15.
[2] T.J. Richardson, J.L. Slack, M.D. Rubin, Electrochromism of copper oxide thin films, Proceedings of the 4th International meeting on Electrochromism, Uppsala, 2000.
[3] H. Derin, K. Kantarli, Optical characterization of thin thermal oxide films on copper by ellipsometry, Applied Physics A materials Science and Processing 75 (2002) 391-395.
[4] K.H. Yoon, W.J. Choi, D.H. Kang, Photoelectrochemical properties of copper oxide thin films coated on an n-Si substrate, Thin Solid Films 372 (2000) 250-256.
[5] P. Luzeau, X.Z. Xu, M.Lagues, N. Hess, J.P. Contour, M. Nanot, F. Queyroux, M. Touzeau, D. Pagnon, Copper oxide thin-film growth using an oxygen plasma source, Journal of Vacuum Science Technology 8/6 (1990) 3938-3940.
[6] J.F. Pierson, A. Thobor-Keck, A. Billard, Cuprite, paramelaconite and tenorite films deposited by reactive magnetron sputtering, Applied surface science 210 (2003) 359-367.
[7] L. Kleiman, K. Mudnick, Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic study, Physica Review B 21/8 (1980) 3478-3490.
[8] S. Ishizawa, T. Maruyama, K. Akimoto, Thin-Film Deposition of Cu2O by Reactive Radio-Frequency Magnetron Sputtering, Japanese Journal of Applied Physics 39/2 (2000) 786-788.
[9] R. Chandra, P. Taneja, P. Ayuub, Optical properties of transparent nanocrystalline Cu2O thin films synthesized by high pressure gas sputtering, Nanostructured Materials, 11/4 (1999) 505-512.
[10] S.C. Ray, Preparation of copper oxide thin film by the sol-gel-like dip technique and study of their structural and optical properties, Solar Energy Materials & Solar Cells 68\3-4 (2001) 307-312.
[11] A. Paretta, M.K. Jayaraj, A. Di Nocera, S. Loreti, L. Quercia, A. Agati, Electrical and optical properties of copper oxide films prepared by rf magnetron sputtering, Physic Status Solidi A155\2 (1996) 399-404.
[12] T. Murayama, The influence of rf power and oxygen flow rate during deposition, Solar Energy Materials & Solar Cells 56 (1998) 85-91.
[13] B. Balamurugan, B.R. Mehta, Optical and structural properties of nanocrystalline copper oxide thin films prepared by activated reactive evaporation, Thin Solid Films 396 (2001) 90-96.
[14] T.J. Richardson, New electrochromic mirror systems , Solid State Ionics 165 (2003) 305-308.
[15] V.F. Drobny, D.L. Pulfrey, Properties of reactively-sputtered copper oxide thin films, Thin Solid Films 61 (1979) 89-98.
[16] R.H. Sunds, Physica Review 99 (1955) 1222.
[17] EA. Davis, N.F. Mott, Conduction in non-crystalline systems conductivity, optical absorption and photoconductivity in amorphous semiconductors, Philosophical Magazine 22 (1970) 903-922.
[18] J. Tauc, R. Grigorovici, A. Vancu, Physica Status Solid 15 (1966) 627.
[19] R. Kita, T. Hase, R.Itti, M.Sasaki, T. Morishita, S.Tanaka, Synthesis of cupric oxide films using mass-separated low-energy 0+ beam, Applied Physica Letters 60 (1992) 2624-2630.
[20] K. Kawaguchi, R. Kita, M. Nishiyama, T. Morishita, Molecular beam epitaxy growth of CuO and CuO films with controlling the oxygen content by the flux ratio of Cu/O+, Journal of Crystal Growth 143 (1994) 221-226.
[21] K.P. Muthe, J.C. Vyas, S.N. Narang, D.K. Aswal, S.K. Gupta, D. Bhattacharya, R. Pinto, G.P. Kothiyal, S.C. Sabharwal, A study of the CuO phase formation during thin film deposition by molecular beam epitaxy, Thin solid films 324 ( 1998)37-43.
[22] J.W.A.M. Gielen, Plasma beam deposition of amorphous hydrogenated carbon, PhD Thesis, Eindhoven University of Technology, 1996.
Kolekcja BazTech
Identyfikator YADDA bwmeta1.element.baztech-article-BOS5-0020-0019