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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BAT3-0022-0018

Czasopismo

Journal of Telecommunications and Information Technology

Tytuł artykułu

Effects of stress annealing on the electrical and the optical properties of MOS devices

Autorzy Rzodkiewicz, W.  Kudła, A.  Rawicki, Z.  Przewłocki, H. M. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
Abstrakty
EN In this paper we show the results of a study of the effects of high-temperature stress annealing in nitrogen on the refraction index of SiO2 layers and electrical properties in metal-oxide-semiconductor (MOS) devices. We have experimentally characterized the dependence of the reduced effective contact potential difference (ECPD), the effective oxide charge density (Neff), and the mid-gap interface trap density (Dit) on the annealing conditions. Subsequently, we have correlated such properties with the dependence of the refraction index and oxide stress on the annealing conditions and silicon dioxide thickness. Also, the dependence of mechanical stress in the Si-SiO2 system on the oxidation and annealing conditions has been experimentally determined. We consider the contributions of the thermal-relaxation and nitrogen incorporation processes in determining changes in the SiO2 layer refractive index and the electrical properties with annealing time. This description is consistent with other annealing studies carried out in argon, where only the thermal relaxation process is present.
Słowa kluczowe
EN stress   MOS   Si-SiO2 system   electrical parameters   refractive index  
Wydawca Instytut Łączności - Państwowy Instytut Badawczy
Czasopismo Journal of Telecommunications and Information Technology
Rocznik 2005
Tom nr 1
Strony 115--119
Opis fizyczny Bibliogr. 15 poz., il.
Twórcy
autor Rzodkiewicz, W.
  • Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland, rzodki@ite.waw.pl
autor Kudła, A.
  • Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland, kudla@ite.waw.pl
autor Rawicki, Z.
  • Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland
autor Przewłocki, H. M.
  • Institute of Electron Technology, Lotników av. 32/46, 02-668 Warsaw, Poland, hmp@ite.waw.pl
Bibliografia
[1] E. H. Nicollian and J. R. Brews, MOS Physics and Technology. New York: Wiley, 1982.
[2] H. M. Przewłocki and H. Z. Massoud, "Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO2 interface of metal-oxide-semiconductor devices", J. Appl. Phys., vol. 92, pp. 2198-2201, 2002.
[3] H. Z. Massoud and H. M. Przewłocki, "Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal-oxide-semiconductor devices", J. Appl. Phys., vol. 92, pp. 2202-2206, 2002.
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[8] C. M. Herzinger, B. Yohs, W. A. McGahan, and J. A. Woollam, "Ellipsometric determination of optical constants for silicon and thermally grown silicon dioxide via a multi-sample, multi-wavelength, multi-angle investigation ", J. Appl. Phys., vol. 83, pp. 3323-3336, 1998.
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[13] W. A. Brantley, "Calculated elastic constants for stress problems associated with semiconductor devices", J. Appl. Phys., vol. 44, pp. 534-535, 1973.
[14] Tencor FLX-2320 Thin Film Stress Measurement, User Manual, Rev. B, 1995.
[15] H. M. Przewłocki, "Theory and applications of internal emission in the MOS system at low electric fields", Solid-State Electron., vol. 45, pp. 1241-1250, 2001.
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