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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BAT3-0022-0011

Czasopismo

Journal of Telecommunications and Information Technology

Tytuł artykułu

Properties of Al contacts to Si surface exposed in the course of plasma etching of previously grown nanocrystalline c-BN film

Autorzy Firek, P.  Werbowy, A.  Szmidt, J.  Olszyna, A. R. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
Abstrakty
EN Properties of Al electric contacts to Si(p) surface exposed to fluorine-based plasma etching of nanocrystalline cubic boron nitride (c-BN) film grown previously were studied and compared to the properties of Al contacts fabricated on pristine or dry etched surface of Si(p) wafers. In addition, a part of the investigated samples was annealed in nitrogen atmosphere at the temperature of 673 K. Analysis of contract properties is based on current-voltage (I-V) measurements of the produced Al-Si structures. The presented investigations were performed in order to evaluate the efficiency of the applied plasma etching method of nanocrystalline c-BN from the viewpoint of its influence on the properties of metal contacts formed subsequently and thus on the performance of electronic devices involving the use of boron nitride.
Słowa kluczowe
EN cubic boron nitride   plasma etching   electric contacts  
Wydawca Instytut Łączności - Państwowy Instytut Badawczy
Czasopismo Journal of Telecommunications and Information Technology
Rocznik 2005
Tom nr 1
Strony 76--80
Opis fizyczny Bibliogr. 12 poz., il., tab.
Twórcy
autor Firek, P.
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland, pfirek@elka.pw.edu.pl
autor Werbowy, A.
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland, werbowy@imio.pw.edu.pl
autor Szmidt, J.
  • Institute of Microelectronics and Optoelectronics, Warsaw University of Technology Koszykowa st 75, 00-662 Warsaw, Poland, j.szmidt@elka.pw.edu.pl
autor Olszyna, A. R.
  • Faculty of Materials Science and Engineering Warsaw University of Technology Wołoska st 141 02-507 Warsaw, Poland, aolszyna@meil.pw.edu.pl
Bibliografia
[1] P. J. Gielisse, "Wide bandgap materials in future electronic applications", in Conf. IMAPS, Rytro, Poland, 2000, www.cyf-kr.edu.pl/academic/OBRMHiR/imaps/data/txt/txt11.htm
[2] S. Noor Mohammad, "Electrical characteristics of thin film cubic boron nitride", Solid-State Electron., vol. 46, p. 203, 2002.
[3] High-Temperature Electronics. R. Kirschmann, Ed., Piscataway: IEEE Press, 1999.
[4] A. Werbowy, J. Szmidt, A. Olszyna, A. Sokołowska, and P. Pawłowski, "Electronic properties of nanocrystalline BN and AlN films deposited on Si and GaAs - a comparison", Diam. Rel. Mater., vol. 8, p. 391, 1999.
[5] A.Werbowy, P. Firek, J. Szmidt, A. Olszyna, and M. Gałązka, "Electric characterization and plasma etching of nanocrystalline c-BN layers", J. Wide Bandgap Mater., vol. 9, p. 169, 2002.
[6] A. Werbowy, J. Szmidt, A. Sokołowska, and S. Mitura, "RF plasma selective etching of boron nitride films", Diam. Rel. Mater., vol. 9, p. 609, 2000.
[7] M. Gałązka, J. Szmidt, and A. Werbowy, "The influence of plasma RF processes on nitride (BN, AlN, CN) layers", J. Wide Bandgap Mater., vol. 9, p. 207, 2002.
[8] A. Werbowy, J. Szmidt, A. Sokołowska, A. Olszyna, and S. Mitura, "Fabrication and properties of Mo contacts to amorphous cubic boron nitride (a-cBN) layers", Diam. Rel. Mater., vol. 5, p. 1017, 1996.
[9] E. H. Rhoderick, Metal-Semiconductor Contacts. Oxford: Clarendon Press, 1978.
[10] M. Sokołowski, A. Sokołowska, Z. Romanowski, B. Gokieli, and M. Gajewska, "Properties and growth of BN (borazone) layers from a pulse plasma under a reduced pressure", J. Cryst. Growth, vol. 52, p. 165, 1981.
[11] A. Szczęsny, P. Śniecikowski, J. Szmidt, and A. Werbowy, "Reactive ion etching of novel materials - GaN and SiC", Vacuum, vol. 70, p. 249, 2003.
[12] A. G. Milnes and D. L. Feucht, Heterojunctions and Metal-Semiconductor Junctions. New York, London: Academic Press, 1972.
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