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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BAT3-0022-0008

Czasopismo

Journal of Telecommunications and Information Technology

Tytuł artykułu

An accurate prediction of high-frequency circuit behaviour

Autorzy Yoshitomi, S.  Kimijima, H.  Kojima, K.  Kokatsu, H. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
Abstrakty
EN An accurate way to predict the behaviour of an RF analogue circuit is presented. A lot of effort is required to eliminate the inaccuracies that may generate the deviation between simulation and measurement. Efficient use of computer-aided design and incorporation of as many physical effects as possible overcomes this problem. Improvement of transistor modelling is essential, but there are many other unsolved problems affecting the accuracy of RF analogue circuit modelling. In this paper, the way of selection of accurate transistor model and the extraction of parasitic elements from the physical layout, as well as implementation to the circuit simulation will be presented using two CMOS circuit examples: an amplifier and a voltage controlled oscillator (VCO). New simulation technique, electro-magnetic (EM)-co-simulation is introduced.
Słowa kluczowe
EN electro-magnetic simulation   SPICE   circuit test structure   RF CMOS   EKV2.6-MOS model   spiral inductor   CMOS VCO  
Wydawca Instytut Łączności - Państwowy Instytut Badawczy
Czasopismo Journal of Telecommunications and Information Technology
Rocznik 2005
Tom nr 1
Strony 47--62
Opis fizyczny Bibliogr. 16 poz., il.
Twórcy
autor Yoshitomi, S.
autor Kimijima, H.
  • TOSHIBA Corporation Semiconductor Company, Microelectronics Center 2-5-1 Kasama, Sakae-Ku. Yokohama-City, Kanagawa, 247-8585 Japan, Hideki.Kimijima@toshiba.co.jp
autor Kojima, K.
  • TOSHIBA Corporation Semiconductor Company, Microelectronics Center 2-5-1 Kasama, Sakae-Ku. Yokohama-City, Kanagawa, 247-8585 Japan, Kenji3.kojima@toshiba.co.jp
autor Kokatsu, H.
  • TOSHIBA Corporation Semiconductor Company, Microelectronics Center 2-5-1 Kasama, Sakae-Ku. Yokohama-City, Kanagawa, 247-8585 Japan, Hideyuki.Kokatsu@toshiba.co.jp
Bibliografia
[1] "ADS 2003C reference manual", Agilent Technologies, 2003.
[2] "HSPICE2002.2 model manual", Synopsis, 2002.
[3] C. Enz, F. Krummenacher, and E. Vittoz, "An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications", J. Anal. Integr. Circ. Sig. Proc., no. 8, pp. 83-114, 1995.
[4] M. Bucher, C. Lallement, C. Enz, F. Théodoloz, and F. Krummenacher, "The EPFL-EKV MOSFET model equations for simulation, Version 2.6", Tech. Rep., Electronics Laboratory, Swiss Federal Institute of Technology Lausanne (EPFL), June 1997.
[5] M. Bucher, "Analytical MOS transistor modelling for analog circuit simulation", Ph.D. thesis, no. 2114, Lausanne, EPFL, 1999.
[6] STARC Physical Design Gr, "HiSIM1.2.0 release note", Apr. 2003, http://home.hiroshima-u.ac.jp/usdl/HiSIM.shtml
[7] G. Gildenblat and T. L. Chen, "Overview of an advanced surfacepotential-based MOSFET model", in Tech. Proc. Fifth Int. Conf. Model. Simul. Microsyst., Puerto Rico, 2002, pp. 657-661.
[8] "BSIM3V3 MOSFET model", http://www.device.eecs.berkeley.edu/ bsim3
[9] "BSIM4 MOSFET model", http://www.device.eecs.berkeley.edu/ bsim4
[10] Minitab Inc. "MINITABrfor Windows release 12.21 manual", 1998.
[11] C. Enz, "An MOS transistor model for RF IC design valid in all regions of operation", IEEE Trans. Microw. Theory Tech., vol. 50, no. 1, 2002.
[12] M. J. Deen and T. A. Fieldy, "CMOS RF modeling characterization and applications", World Sci., 2002.
[13] F. Krummenacher, M. Bucher, and W. Grabiński, "Deliverable D2.1, RF EKV MOSFET model implementation", CRAFT, Eur. Project, no. 25710, WP2, July 2000.
[14] F. Krummenacher, M. Bucher, and W. Grabiński, "Deliverable D2.2, RF EKV MOSFET model implementation", CRAFT, Eur. Project, no. 25710, WP2, July 2000.
[15] H. M. Greenhouse, "Design of planar rectangular microelectronic inductors", IEEE Trans. Parts, Hybr., Packag., vol. PHP-10, no. 2, June 1974.
[16] S. S. Mohan, "Modeling, design and optimization of on-chip inductors and transformers", CIS, Stanford University, June 1999.
Kolekcja BazTech
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