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http://yadda.icm.edu.pl:80/baztech/element/bwmeta1.element.baztech-article-BAT3-0022-0005

Czasopismo

Journal of Telecommunications and Information Technology

Tytuł artykułu

Low frequency noise in advanced Si bulk and SOI MOSFETs

Autorzy Jomaah, J.  Balestra, F.  Ghibaudo, G. 
Treść / Zawartość
Warianty tytułu
Języki publikacji EN
Abstrakty
EN A review of recent results concerning the low frequency noise in modern CMOS devices is given. The approaches such as the carrier number and the Hooge mobility fluctuations used for the analysis of the noise sources are presented and illustrated through experimental data obtained on advanced CMOS SOI and Si bulk generations. Furthermore, the impact on the electrical noise of the shrinking of CMOS devices in the deep submicron range is also shown. The main physical characteristics of random telegraph signals (RTS) observed in small area MOS transistors are reviewed. Experimental results obtained on 0.35-0.12 žm CMOS technologies are used to predict the trends for the noise in future CMOS technologies, e.g., 0.1 žm and beyond. For SOI MOSFETS, the main types of layout will be considered, that is floating body, DTMOS, and body-contact. Particular attention will be paid to the floating body effect that induces a kink-related excess noise, which superimposes a Lorentzian spectrum on the flicker noise.
Słowa kluczowe
EN CMOS   SOI   low frequency noise   kink-related excess noise   DTMOS  
Wydawca Instytut Łączności - Państwowy Instytut Badawczy
Czasopismo Journal of Telecommunications and Information Technology
Rocznik 2005
Tom nr 1
Strony 24--33
Opis fizyczny Bibliogr. 38 poz., il.
Twórcy
autor Jomaah, J.
  • IMEP-ENSERG (CNRS-INPG-UJF), 23 rue des Martyrs, BP. 257, 38016 Grenoble cedex 1, France, jomaah@enserg.fr
autor Balestra, F.
  • IMEP-ENSERG (CNRS-INPG-UJF), 23 rue des Martyrs, BP. 257, 38016 Grenoble cedex 1, France, balestra@enserg.fr
autor Ghibaudo, G.
  • IMEP-ENSERG (CNRS-INPG-UJF), 23 rue des Martyrs, BP. 257, 38016 Grenoble cedex 1, France, ghibaudo@enserg.fr
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